News Article
Cree's 150mm n-type SiC wafers on the market
LED innovator Cree has expanded its product family and is now offering epitaxially grown silicon carbide wafers of 150mm (almost 6 inches) diameter
Cree has announced the availability of high quality, low micropipe 150mm 4H n-type SiC epitaxial wafers.
The firm says this latest advancement lowers device cost and enables adoption for customers with existing 150mm diameter device processing lines.
SiC wafer
SiC is a high-performance semiconductor material used in the production of a broad range of lighting, power and communication components, including LEDs, power switching devices and RF power transistors for wireless communications. 150mm diameter single crystal SiC substrates enable cost reductions and increased throughput, while bolstering the continued growth of the SiC industry.
“Cree’s ability to deliver high volumes of 100mm epitaxial wafers is unrivalled in the SiC industry and our latest 150mm technology continues to raise the standards for SiC wafers,” says Vijay Balakrishna, Cree materials product manager. “Our vertically integrated approach assures customers of a complete solution for high quality 150mm SiC epitaxial wafers, providing industry leaders within the power electronics market the stable supply they demand.”
Cree's 150mm epitaxial wafers with highly uniform epitaxial layers as thick as 100µm are available for immediate purchase.
Cree's 150mm 4H n-type SiC epitaxial wafers are available for immediate purchase in limited quantities.
