News Article
Microsemi markets 700W GaN-on-SiC transistor
Suited for use in secondary surveillance, the radar aviation company is continuing to expand its gallium nitride on silicon carbide product portfolio
Microsemi Corporation has unveiled the 1011GN-700ELM, the first in a family of radio frequency (RF) transistors for high-power air traffic control (ATC), secondary surveillance radio (SSR) applications.
SSR is used to send a message to an aircraft equipped with a radar transponder and collect information that allows air traffic controllers to identify, track and measure the location of that particular airplane.
Microsemi's new 700 watt (W) peak 1011GN-700ELM operates at 1030 megahertz (MHz) and supports short- and long-pulsed extended length message (ELM). The new transistor is based on GaN on SiC, which is ideal for high-power electronics applications.
"We are aggressively driving the development of next-generation GaN on SiC power devices to address growing opportunities for higher performance aerospace and military applications," says David Hall, vice president of Microsemi's RF Integrated Systems product group. "With today's new product introduction, we now offer highly reliable GaN on SiC transistors at 250, 500 and 700 W for secondary surveillance radar search and tracking applications. We also have several additional GaN on SiC transistors in development that we will be rolling out later this year."
Microsemi's upcoming product line includes multiple high-pulsed power GaN on SiC transistors for both L, S and C-band radar systems.
The company is also touting its suite of GaN microwave power devices, which includes the following S-band radar models: 2729GN-150, 2729GN-270, 2731GN-110M, 2731GN-200M, 3135GN-100M, 3135GN-170M, 2735GN-35M and 2735GN-100M.
Microsemi also has several new products in development for L-band avionics products covering 960-1215 MHz; L-band radar covering 1200-1400MHz and S-band radar, higher power devices covering 2.7-2.9 GHz.
