+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
 
News Article

Ultra Tec reveals module for improved electronic packaging

A new hardware and software development enhances digital sample preparation system for the decapsulation, thinning and polishing of compound semiconductor packaged and wafer-level devices
Ultra Tec Manufacturing, has announced the availability of a new End-point Detection Module for the ASAP-1 IPS Selected Area Preparation System.

The End-point Detection Module is a hardware and software enhancement (patent pending) for the ASAP-1 IPS that provides the capability to quantify and act upon the capacitive and/or resistive properties of electronic device and packaging materials, in order to enhance the sample preparation process.

The ASAP-1 IPS is suited for use in compound semiconductor and silicon sample preparation.



An integrated circuit on a graphics board being prepared on the ASAP-1 IPS in End-point Detection Mode

Controlled microsurgery, with interactive end-pointing, opens the door for improved resolution with SQUID Microscopy, INSB thermography (Lock-In), Thermal Laser Stimulus and similar techniques without fully exposing the die topside or by stopping a few microns before target on silicon from the backside.

ASAP-1 IPS is a digital sample preparation system for the decapsulation, thinning and polishing of packaged and wafer-level devices. Drawing on Ultra Tec’s knowledge and market leadership in the selected area preparation area, ASAP-1 IPS has been designed to be specifically ‘device centric’ – using a combination of advanced programming and tool patterns, force feedback and live machine-vision - to help the user obtain the best results with the highest yield.

The End-point module will be available for demonstration at the upcoming ISTFA 2012 Conference in Phoenix, Arizona.



A 4 x 4mm pocket area backside thinned into an IC on a deliberate tilt to confirm endpoint capability.  The indicated spot shows the thinnest remaining silicon (2.5µm) on the left. The Upper image shows the fringes at 1064nm and the Lower image is a C-SPM image of the area of interest, also produced on the ASAP-1 IPS system

×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: