News Article
EPC to update Safe Operating Area data on eGaN FETs
The firm says its enhancement mode gallium nitride FETs exhibit a positive temperature coefficient across their entire operating range, thus overcoming one of the performance limitations of the silicon MOSFET
Efficient Power Conversion Corporation (EPC) is releasing safe operating area (SOA) data for its entire product line of eGaN FETs.
The positive temperature coefficient across virtually their entire operating range allows a square SOA limited only by average device temperature.
SOA is an indicator of the device’s ability to transfer heat away from a resistive junction. The more efficient a device is at getting rid of generated heat, the lower thermal resistance and the better the SOA performance.
EPC says its eGaN FETs have many major advantages over the power MOSFET needed for today’s high performance applications. The firm's eGaN FET’s are claimed to offer superior device on-resistance while its positive temperature coefficients inhibit hot spot generation within the die, resulting in superior Safe Operating Area capabilities.
An application note presenting the Safe Operating Area for EPC eGaN FETs is available at: http://epc-co.com/epc/documents/product-training/SafeOperatingArea.pdf In addition, EPC is in the process of updating each of its product data sheets to include SOA performance curves.
EPC's enhancement mode GaN based power management FETs are power MOSFET replacements in applications such as servers, wireless power transmission, envelope tracking, RF transmission, power-over-ethernet (PoE), solar micro inverters, energy efficient lighting, and class-D audio amplifiers.
The positive temperature coefficient across virtually their entire operating range allows a square SOA limited only by average device temperature.
SOA is an indicator of the device’s ability to transfer heat away from a resistive junction. The more efficient a device is at getting rid of generated heat, the lower thermal resistance and the better the SOA performance.
EPC says its eGaN FETs have many major advantages over the power MOSFET needed for today’s high performance applications. The firm's eGaN FET’s are claimed to offer superior device on-resistance while its positive temperature coefficients inhibit hot spot generation within the die, resulting in superior Safe Operating Area capabilities.
An application note presenting the Safe Operating Area for EPC eGaN FETs is available at: http://epc-co.com/epc/documents/product-training/SafeOperatingArea.pdf In addition, EPC is in the process of updating each of its product data sheets to include SOA performance curves.
EPC's enhancement mode GaN based power management FETs are power MOSFET replacements in applications such as servers, wireless power transmission, envelope tracking, RF transmission, power-over-ethernet (PoE), solar micro inverters, energy efficient lighting, and class-D audio amplifiers.
