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Tianyu expands SiC power device epitaxy facilities

The firm, which grows 4", 3" and 2" silicon carbide wafers, is expanding to cope with increased demand from the power market
Tianyu Semiconductor Technology, one of the first SiC epitaxial wafer companies in China, has started to expand its SiC epitaxial wafer business globally.

The company made this move after completing three contracts prior to this in August 2012.

"The prospects of the SiC are bright," says Li Xiguang, GM of Tianyu. "SiC substrate is getting better, larger and cheaper; more attention is paid on this market. SiC device will show more competitiveness in the global market."

According to market analysts at Yole Développement, the SiC device market will be netting a billion dollars in a decade.

SiC epitaxial wafers are used in producing Schottky diodes, MOSFETs, JFETs, and BJTs over a wide voltage range and customised wafers for thyristors, GTOs and IGBTs over a wider voltage range for medium to very high voltage power conversion system applications.

These devices are used for energy efficient power electronic devices for numerous applications, such as air-conditioning, solar and wind turbine inverters, hybrid and electric vehicles, high speed trains, smart grids and high-voltage DC power transmission. SiC-based semiconductor devices can reduce energy losses and system size, leading to overall reduced system costs and enhanced reliability.

Tianyu was founded on January 7th, 2009, and is located in China's Songshan Lake National High-tech Industrial Development Zone of Dongguan City in Guangdong province.



Tianyu facility in Dongguan City

The firm has six major researchers and 30 engineers working on the SiC epitaxial technology growth. The epitaxial wafers are 4", 3", and 2". Production capacity is 10000 pieces per month, which can be increased if needed, and product specifications reach the advanced level in international standards.

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