News Article
EPC upgrades development boards featuring eGaN FETs
The EPC9003 and EPC2007, which incorporate the firm's gallium nitride technology, feature low-side gate drivers from Texas Instruments
Efficient Power Conversion Corporation (EPC) has launched two development boards, the EPC9003 and the EPC9006. Both feature the firm's enhancement-mode eGaN field effect transistors (FETs).
These boards demonstrate how the recent introductions of IC gate drivers, optimised for eGaN FETs, make the task of transitioning from silicon to eGaN technology simple and cost effective.
The EPC9003 development board is a half bridge configuration containing two 200V EPC2010 eGaN FETs. These have a 5A maximum output current using the low-side gate driver optimised for GaN devices, the LM5114 from Texas Instruments.
The EPC2010 is designed for use in applications such as solar microinverters, class D audio amplifiers, Power over Ethernet, and synchronous rectification.
Both the EPC9003 and the EPC9006 are intended to simplify the evaluation process of eGaN FETs by including all the critical components on single 2” x 1.5” boards that can be easily connected into any existing converter. Also, there are various probe points on the boards to facilitate simple waveform measurement and efficiency calculation.
What's more, EPC has also announced the availability of the EPC9006 development board containing two 100V EPC2007 eGaN FETs with 5A maximum output current. This board uses the LM5113 from Texas Instruments, a 100 V half bridge driver optimised for GaN transistors.
The LM5113 used on this board is packaged in a 2x2 BGA package allowing for a very compact power stage with the driver and two eGaN FETs. Applications suited to the EPC2007 include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.
The EPC9003 and EPC9006 development boards are priced at $95.00 each. These development boards, like all EPC products, are available for immediate delivery from Digi-Key.
These boards demonstrate how the recent introductions of IC gate drivers, optimised for eGaN FETs, make the task of transitioning from silicon to eGaN technology simple and cost effective.
The EPC9003 development board is a half bridge configuration containing two 200V EPC2010 eGaN FETs. These have a 5A maximum output current using the low-side gate driver optimised for GaN devices, the LM5114 from Texas Instruments.
The EPC2010 is designed for use in applications such as solar microinverters, class D audio amplifiers, Power over Ethernet, and synchronous rectification.
Both the EPC9003 and the EPC9006 are intended to simplify the evaluation process of eGaN FETs by including all the critical components on single 2” x 1.5” boards that can be easily connected into any existing converter. Also, there are various probe points on the boards to facilitate simple waveform measurement and efficiency calculation.
What's more, EPC has also announced the availability of the EPC9006 development board containing two 100V EPC2007 eGaN FETs with 5A maximum output current. This board uses the LM5113 from Texas Instruments, a 100 V half bridge driver optimised for GaN transistors.
The LM5113 used on this board is packaged in a 2x2 BGA package allowing for a very compact power stage with the driver and two eGaN FETs. Applications suited to the EPC2007 include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.
The EPC9003 and EPC9006 development boards are priced at $95.00 each. These development boards, like all EPC products, are available for immediate delivery from Digi-Key.
