News Article
TriQuint's GaAs PAs & GaN transistors speed up customer designs
The firm is introducing four gallium nitride based power transistors and four gallium arsenide based pHEMT power amplifiers. They are suited to applications such as emergency responder radios, electronic warfare, radar solutions and test equipment
TriQuint Semiconductor is rolling out new processes to more quickly expand its catalogue of products for commercial and defence customers.
The company will highlight twelve new products at European Microwave Week in Amsterdam (EuMW), taking place between October 29th and 31st.
TriQuint's new set of products include a family of RF GPS diplexers that reduces PCB space by nearly three times compared to ceramic filter products.
The firm will also showcase new packaged transistors and amplifiers including four based on GaN and four based on gallium arsenide GaAs technology. The products support a wide variety of commercial and defence applications such as emergency responder radios, electronic warfare, radar solutions and test equipment.
“TriQuint’s new integration approach and focus on broad-market products is allowing us to be more responsive to customer requests,” says Infrastructure and Defence Products Vice President and General Manager, James L. Klein. “TriQuint’s focus to expand our product lines and deliver more products to customers more quickly has resulted in a new approach to filter technology. This new design and manufacturing flexibility will enable our global customers to bring their products to market faster than ever.”
TriQuint’s new diplexer family grew out of customer needs for performance and faster delivery, along with the option to change filters throughout production lifetimes. The firm’s new diplexer modules allow designers to incorporate any two filters from its extensive surface acoustic wave (SAW) CSP5 portfolio.
This new flexibility gives infrastructure and defence customers a customised solution using commercial off-the-shelf (COTS) products while avoiding the cost and time of a custom design. The solution also protects against performance compromises when trying to use a single device across multiple applications.
In addition to quicker product delivery, the new approach allows customers to reduce the space needed for filter designs. The new plug-and-play, 5 x 5 x 2mm integrated products are orders of magnitude smaller than lumped element diplexers and nearly three times smaller than similar high performance RF ceramic filter modules.
Besides showcasing its new products at EuMW, TriQuint will present new radar and sensing technology solutions in the European-focused ‘Defence, Security and Space Forum’ on October 31st in the main auditorium of the RAI Centre.
The presentation is a special program of European Microwave Week and will focus on new GaN products and integrated assemblies for the changing needs of global security and defence systems. Admission is free.
Technical Specifications for TriQuint EuMW Product Solutions: Sampling Now
Apart from four SAW diplexer modules designed for GPS, TriQuint will exhibit the following:
T1G6003028-FS
DC-6 GHz GaN RF power transistor. Specifications are as follows: 30W; 14dB gain at 3.5GHz; 10dB gain at 6 GHz; drain efficiency: 55% at 3.5 GHz / 44% at 6 GHz; 28V at 200 mA, withstands 10:1 VSWR, EAR99 flangeless package.
T1G6003028-FL
DC-6 GHz GaN RF power transistor. Specifications are as follows: 30W; 14dB gain at 3.5GHz; 10dB gain at 6 GHz; drain efficiency: 55% at 3.5 GHz / 44% at 6 GHz; 28V at 200 mA, withstands 10:1 VSWR, EAR99 flanged package.
T1G4003532-FS
DC-3.5 GHz GaN RF power transistor. Specifications are as follows: 37W CW; more than 16dB gain at 3.5 GHz; 10dB gain at 6 GHz; power-added efficiency: 60% at 5 GHz / 49.6% at 6 GHz; 32V at 2.4A; withstands 10:1 VSWR; EAR99 flangeless package.
T1G4003532-FL
DC-3.5 GHz GaN RF power transistor. Specifications are as follows: 37W CW, more than 16dB gain at 3.5 GHz; 10dB gain at 6GHz; power-added efficiency: 60% at 5 GHz / 49.6% at 6 GHz; 32V at 2.4A; withstands 10:1 VSWR; EAR99; flange mount package.
TGA2502-GSG
13-16 GHz GaAs pHEMT RF power amplifier. Specifications are as follows: 2.8W; 20dB large-signal gain; 25dB small-signal gain; 25% efficiency; 7V at 1.3A; 14-lead flange mount package.
TGA2704-SM
9-11 GHz GaAs pHEMT RF power amplifier. Specifications are as follows: 7W; 19dB large-signal gain; 22dB small-signal gain; 40% power-added efficiency; 9V at 1.05A; 7x7x1.27mm leadless SMT package.
TGA2710-SM
9.5-12 GHz GaAs pHEMT RF power amplifier. Specifications are as follows: 7W; 19dB large-signal gain; 20dB small-signal gain; 36% power-added efficiency; 9V at 1.05A; 7x7x1.27mm leadless SMT package.
TGA2575-TS
32-38 GHz GaAs pHEMT RF power amplifier. Specifications are as follows: 3W; 19dB small-signal gain; 22% power-added efficiency; 6V at 2.1A. TGA2575 die is mounted to an 8.92x5.31mm thermal spreader.
Samples and evaluation boards are available.
The company will highlight twelve new products at European Microwave Week in Amsterdam (EuMW), taking place between October 29th and 31st.
TriQuint's new set of products include a family of RF GPS diplexers that reduces PCB space by nearly three times compared to ceramic filter products.
The firm will also showcase new packaged transistors and amplifiers including four based on GaN and four based on gallium arsenide GaAs technology. The products support a wide variety of commercial and defence applications such as emergency responder radios, electronic warfare, radar solutions and test equipment.
“TriQuint’s new integration approach and focus on broad-market products is allowing us to be more responsive to customer requests,” says Infrastructure and Defence Products Vice President and General Manager, James L. Klein. “TriQuint’s focus to expand our product lines and deliver more products to customers more quickly has resulted in a new approach to filter technology. This new design and manufacturing flexibility will enable our global customers to bring their products to market faster than ever.”
TriQuint’s new diplexer family grew out of customer needs for performance and faster delivery, along with the option to change filters throughout production lifetimes. The firm’s new diplexer modules allow designers to incorporate any two filters from its extensive surface acoustic wave (SAW) CSP5 portfolio.
This new flexibility gives infrastructure and defence customers a customised solution using commercial off-the-shelf (COTS) products while avoiding the cost and time of a custom design. The solution also protects against performance compromises when trying to use a single device across multiple applications.
In addition to quicker product delivery, the new approach allows customers to reduce the space needed for filter designs. The new plug-and-play, 5 x 5 x 2mm integrated products are orders of magnitude smaller than lumped element diplexers and nearly three times smaller than similar high performance RF ceramic filter modules.
Besides showcasing its new products at EuMW, TriQuint will present new radar and sensing technology solutions in the European-focused ‘Defence, Security and Space Forum’ on October 31st in the main auditorium of the RAI Centre.
The presentation is a special program of European Microwave Week and will focus on new GaN products and integrated assemblies for the changing needs of global security and defence systems. Admission is free.
Technical Specifications for TriQuint EuMW Product Solutions: Sampling Now
Apart from four SAW diplexer modules designed for GPS, TriQuint will exhibit the following:
T1G6003028-FS
DC-6 GHz GaN RF power transistor. Specifications are as follows: 30W; 14dB gain at 3.5GHz; 10dB gain at 6 GHz; drain efficiency: 55% at 3.5 GHz / 44% at 6 GHz; 28V at 200 mA, withstands 10:1 VSWR, EAR99 flangeless package.
T1G6003028-FL
DC-6 GHz GaN RF power transistor. Specifications are as follows: 30W; 14dB gain at 3.5GHz; 10dB gain at 6 GHz; drain efficiency: 55% at 3.5 GHz / 44% at 6 GHz; 28V at 200 mA, withstands 10:1 VSWR, EAR99 flanged package.
T1G4003532-FS
DC-3.5 GHz GaN RF power transistor. Specifications are as follows: 37W CW; more than 16dB gain at 3.5 GHz; 10dB gain at 6 GHz; power-added efficiency: 60% at 5 GHz / 49.6% at 6 GHz; 32V at 2.4A; withstands 10:1 VSWR; EAR99 flangeless package.
T1G4003532-FL
DC-3.5 GHz GaN RF power transistor. Specifications are as follows: 37W CW, more than 16dB gain at 3.5 GHz; 10dB gain at 6GHz; power-added efficiency: 60% at 5 GHz / 49.6% at 6 GHz; 32V at 2.4A; withstands 10:1 VSWR; EAR99; flange mount package.
TGA2502-GSG
13-16 GHz GaAs pHEMT RF power amplifier. Specifications are as follows: 2.8W; 20dB large-signal gain; 25dB small-signal gain; 25% efficiency; 7V at 1.3A; 14-lead flange mount package.
TGA2704-SM
9-11 GHz GaAs pHEMT RF power amplifier. Specifications are as follows: 7W; 19dB large-signal gain; 22dB small-signal gain; 40% power-added efficiency; 9V at 1.05A; 7x7x1.27mm leadless SMT package.
TGA2710-SM
9.5-12 GHz GaAs pHEMT RF power amplifier. Specifications are as follows: 7W; 19dB large-signal gain; 20dB small-signal gain; 36% power-added efficiency; 9V at 1.05A; 7x7x1.27mm leadless SMT package.
TGA2575-TS
32-38 GHz GaAs pHEMT RF power amplifier. Specifications are as follows: 3W; 19dB small-signal gain; 22% power-added efficiency; 6V at 2.1A. TGA2575 die is mounted to an 8.92x5.31mm thermal spreader.
Samples and evaluation boards are available.
