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TriQuint's GaAs amplifiers simplify assembly

The firm's four gallium arsenide amplifiers are suited for use in microwave radios, very small aperture terminals and military applications
TriQuint Semiconductor has released four new packaged GaAs pHEMT RF power amplifier modules that deliver high output power, gain and efficiency with coverage from 6-38 GHz.

Each new amplifier is packaged for easier assembly including designs that support multi-layer PCB layouts.

TriQuint’s new amplifiers are suited for use in commercial applications such as point-to-point microwave radios, very small aperture terminals (VSATs) and defence systems such as communications, radar and electronic warfare (EW).



The four new amplifiers include: the TGA2502-GSG (3.6W [CW] from 13-16 GHz for VSAT systems); the TGA2575-TS (3W [CW] from 32-38 GHz for communications and defence radar systems); the TGA2704-SM (7W [CW] from 9-11 GHz for microwave radio and radar); and the TGA2710-SM (7W [CW] from 9.5-12 GHz also for microwave radio and radar).

The TGA2575-TS is the latest addition to TriQuint’s Die-on-Tab product family, which makes it easier for manufacturers to handle die-level devices and assemble components by placing semiconductor FETs or MMIC amplifiers on thermal spreaders. A vacuum reflow process creates bonds between dies and bases. These bonds are virtually void-free and have high thermal stability. The TGA2575-TS and all die-on-tab products are inspected in the factory for thorough quality assurance and higher effective yields.

TriQuint’s new GaAs pHEMT RF power amplifiers have been released at European Microwave Week (EuMW) in Amsterdam. TriQuint has also revealed four new GaN RF power transistors for a wide range of commercial and defence applications including communications, radar and EW.

In addition to introducing 12 new product solutions at EuMW, TriQuint is presenting information covering new radar and sensing technology during the European-focused “Defence, Security and Space Forum.” The Forum is scheduled for October 31st in the main auditorium of the RAI Centre in Amsterdam. The presentation is a special track within EuMW. It focuses on new GaN and integrated assembly solutions; admission is free.

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