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TriQuint's GaN transistors slash amplifier size by half

The firm's gallium nitride devices are suited to broadband systems used in commercial and military applications
TriQuint Semiconductor is introducing four new rugged GaN HEMT RF power transistors that offer superior gain and efficiency.

The company's GaN transistors can cut the size of amplifier line-ups in half while improving efficiency and gain.



TriQuint's new GaN transistors deliver RF output power from 30-37W (CW) over operating frequencies as broad as DC to 6 GHz. They are excellent choices for applications ranging from commercial and defence radar to communications, test equipment, electronic warfare and similar broadband systems.

TriQuint's new GaN power transistors include the 28V T1G6003028-FS that operates from DC to 6 GHz and delivers 30W output power with efficiency of 55% at 3.5 GHz and 44 percent at 6 GHz.

The T1G6003028-FL delivers the same performance and is offered in a flanged package to satisfy these assembly requirements.

TriQuint's new 32V T1G4003532-FS and the flanged-package T1G4003532-FL are ideal for S-band radar and similar applications. They deliver 37W (CW) output power from DC to 3.5 GHz. Both devices provide more than 16dB of gain at 3.5 GHz and 10dB of gain at 6 GHz; their power-added efficiency is 60% at 5 GHz and 49.6 percent at 6 GHz.

All four new GaN transistors can withstand output impedance (VSWR) mismatches up to 10:1 without functional damage and are optimized for operation at high drain bias conditions, reducing system cost and thermal management overhead. All devices are exportable to most countries.

 

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