News Article
Brolis new MBE and laser diode facility to open in December
MBE specialist and mid-infrared laser diode maker Brolis Semiconductors announces the date for the launch of their new facility to be set for December 5, 2012.
The new building features state-of-the-art class 1000/10000 cleanroom environment with dedicated facilities for molecular beam epitaxy and optoelectronic device testing and packaging. The entire facility was raised in less than 9 month, accelerated by the investments from the Venture Capital fund LitCapital and European Union structural grants.
“Our goal was to launch the facility as fast as possible, so that we do not lose the momentum, both technological and competitive. Today, I believe we are pretty much on schedule with the opening. Our second milestone is to deliver first R&D laser diode products by February, 2013,” says Dominykas Vizbaras, CEO of Brolis Semiconductors. According to Augustinas Vizbaras, company’s COO, first laser products will be 2090 nm, 2330 nm, 2730 nm, 3300 nm, and 3400 nm. Some of these wavelengths will also be high power products.
About Brolis Semiconductors: Brolis Semiconductors specializes in mid-infrared type-I GaSb laser diodes and MBE epitaxy. Company serves the community with MBE epitaxial wafers for antimonide and arsenide materials for thermal imaging focal plane arrays, CPV and custom devices for industrial, defense, and scientific markets. Aside epitaxy, company manufactures GaSb laser diodes in the 1800 – 4000 nm wavelength range. Major markets for the laser diodes are gas sensing for industrial process monitoring, medical and defense. High power laser diodes and laser diode bars can be used for direct IR countermeasures, dermatology and plastic welding.
For more information, visit: www.brolis-semicon.com
“Our goal was to launch the facility as fast as possible, so that we do not lose the momentum, both technological and competitive. Today, I believe we are pretty much on schedule with the opening. Our second milestone is to deliver first R&D laser diode products by February, 2013,” says Dominykas Vizbaras, CEO of Brolis Semiconductors. According to Augustinas Vizbaras, company’s COO, first laser products will be 2090 nm, 2330 nm, 2730 nm, 3300 nm, and 3400 nm. Some of these wavelengths will also be high power products.
About Brolis Semiconductors: Brolis Semiconductors specializes in mid-infrared type-I GaSb laser diodes and MBE epitaxy. Company serves the community with MBE epitaxial wafers for antimonide and arsenide materials for thermal imaging focal plane arrays, CPV and custom devices for industrial, defense, and scientific markets. Aside epitaxy, company manufactures GaSb laser diodes in the 1800 – 4000 nm wavelength range. Major markets for the laser diodes are gas sensing for industrial process monitoring, medical and defense. High power laser diodes and laser diode bars can be used for direct IR countermeasures, dermatology and plastic welding.
For more information, visit: www.brolis-semicon.com
