News Article
RFMD GaN HEMT PAs suited to high peak-to-average ratio apps
RFMD’s RFHA104x series of high-power gallium nitride broadband power transistors (BPTs) are optimised for military communications, commercial wireless infrastructure, and general purpose applications
RFMD's latest advanced 65V high power density GaN semiconductor process is optimised for high peak-to-average ratio applications.
The firm's new high-performance amplifiers achieve high power with high efficiency and flat gain over a broad frequency range in a single amplifier design.
Each is an input-matched GaN transistor packaged in an air cavity ceramic package providing excellent thermal stability. Ease of integration is accomplished through the incorporation of simple, optimised, matching networks external to the package that provide wideband gain and high efficiency, all in a single amplifier ideal for linear correction circuits.
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The RFHA1042 has a peak power of 125W and a single circuit for frequency of 225MHz to 450MHz. The RFHA1043 can operate at 150W and single circuit for frequency of 1.2GHz to 1.85GHz.
48V CW broadband performance
At a POUT of 45.2dBm, the RFHA1042 has a gain of 18.5dB and the RFHA1043 a gain of 15.5dB. The drain efficiency of the RFHA1042 is 42 percent and is 30 percent for the RFHA1043.
48V CW broadband performance
The RFHA1042 has a POUT of 45.2dBm and the RFHA1043 a POUT of 52dBm. The RFHA1042 has a gain of 16dB and the RFHA1043 a gain of 13.5dB. The drain efficiency of the RFHA1042 is 60 percent and is 51 percent for the RFHA1043.
The devices are optimised for video bandwidth and exhibit minimal memory effects.
These products are currently available in production quantities. Large signal models are also available.
