News Article
RFMD adds to its family of linear GaN power transistors
The gallium nitride transistors are optimised for broadband applications requiring linear back-off operation or reduced spurious performance
RF Micro Devices has production released two highly linear GaN RF unmatched power transistors (UPTs).
RFMD says the RFHA3942 (35W) and RFHA3944 (65W) deliver superior linear performance versus competing GaN transistors.
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The release of the RFHA3942 and RFHA3944 follows the previous release of the RF393X series of UPTs targeting continuous wave (CW) and pulsed peak power applications.
This new series of linear GaN discrete amplifiers is optimised for broadband applications requiring linear back-off operation or reduced spurious performance.
RFMD plans to further its technology with future releases of 10W and 95W linear GaN devices over the next 12 months, significantly expanding the GaN UPT options available to RFMD's customers.
RFMD's highly linear GaN UPTs target new and existing communication architectures requiring improved broadband linear performance in support of high peak-to-average modulation waveforms.
The RFHA3942 and RFHA3944 are tuneable over a broad frequency range (DC to 4GHz) and provide CW peak power of 35W and 65W respectively. They also offer high gain of 15dB and high peak efficiency of over 55 percent.
Using an IS95 9.8dB PAR signal tuned to 2.1GHz, the RFHA3942 achieves -43dBc adjacent channel power (ACP) at 34dBm POUT and the RFHA3944 achieves -54dBc ACP at 37dBm POUT.
What's more, the RFHA3942 and RFHA3944 offer high terminal impedance at the input and output of the package, enabling wideband gain and power performance advantages in a single amplifier. Both devices are packaged in a flanged ceramic two-leaded package that leverages RFMD's advanced heat-sink and power-dissipation technologies to deliver excellent thermal stability and conductivity.
Jeff Shealy, vice president and general manager of RFMD's Power Broadband business unit, says, "RFMD is very pleased to expand its GaN-based product portfolio, offering industry-leading linear power performance in support of diverse end markets. RFMD's GaN product portfolio clearly demonstrates our continued commitment to technology and product leadership, and we look forward to introducing additional GaN devices that feature superior power density, high efficiency, rugged dependability, and 'green' power consumption advantages."
RFMD is showcasing a broad portfolio of RF components at the electronica 2012 trade show in Munich, Germany, taking place between November 13th and 16th, at stand #A4.134.
Samples and production quantities are available now through RFMD's online store or through local RFMD sales channels.
RFMD says the RFHA3942 (35W) and RFHA3944 (65W) deliver superior linear performance versus competing GaN transistors.
The release of the RFHA3942 and RFHA3944 follows the previous release of the RF393X series of UPTs targeting continuous wave (CW) and pulsed peak power applications.
This new series of linear GaN discrete amplifiers is optimised for broadband applications requiring linear back-off operation or reduced spurious performance.
RFMD plans to further its technology with future releases of 10W and 95W linear GaN devices over the next 12 months, significantly expanding the GaN UPT options available to RFMD's customers.
RFMD's highly linear GaN UPTs target new and existing communication architectures requiring improved broadband linear performance in support of high peak-to-average modulation waveforms.
The RFHA3942 and RFHA3944 are tuneable over a broad frequency range (DC to 4GHz) and provide CW peak power of 35W and 65W respectively. They also offer high gain of 15dB and high peak efficiency of over 55 percent.
Using an IS95 9.8dB PAR signal tuned to 2.1GHz, the RFHA3942 achieves -43dBc adjacent channel power (ACP) at 34dBm POUT and the RFHA3944 achieves -54dBc ACP at 37dBm POUT.
What's more, the RFHA3942 and RFHA3944 offer high terminal impedance at the input and output of the package, enabling wideband gain and power performance advantages in a single amplifier. Both devices are packaged in a flanged ceramic two-leaded package that leverages RFMD's advanced heat-sink and power-dissipation technologies to deliver excellent thermal stability and conductivity.
Jeff Shealy, vice president and general manager of RFMD's Power Broadband business unit, says, "RFMD is very pleased to expand its GaN-based product portfolio, offering industry-leading linear power performance in support of diverse end markets. RFMD's GaN product portfolio clearly demonstrates our continued commitment to technology and product leadership, and we look forward to introducing additional GaN devices that feature superior power density, high efficiency, rugged dependability, and 'green' power consumption advantages."
RFMD is showcasing a broad portfolio of RF components at the electronica 2012 trade show in Munich, Germany, taking place between November 13th and 16th, at stand #A4.134.
Samples and production quantities are available now through RFMD's online store or through local RFMD sales channels.
