News Article
Integra unveils GaN on SiC devices for S-Band radar
The two gallium nitride on silicon carbide modules are suited to weather radar and surface ship radar. S-band radar is also used in some communications satellites, especially those used to communicate with the space shuttle and the international space station
Integra is launching two internally pre-matched, GaN high electron mobility transistors (HEMTs) for S-band radar.
The IGN2729M500 operates over the 2.7 - 2.9 GHz instantaneous frequency band. Under 300µs/10% pulse conditions it supplies a minimum of 500 W of peak output power with typical performance of 560 W, typically 12 dB gain and over 60 % efficiency. The device is rated for peak output power of 500 W with 10% duty factor and average power of 50W.
The IGN3135M130 operates over the 3.1–3.5 GHz instantaneous frequency band. Under 300µs / 20 % pulse conditions it supplies a minimum of 130 W of peak output power with typical performance of 150 W with 12dB gain. The device is rated for peak output power of 130W with 20% duty factor and average power of 26W.
When appropriately rated, both HEMTS are operable under a wide range of pulse widths and duty factors. Specified operation for both devices is with Class AB bias. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture.
The IGN2729M500 operates over the 2.7 - 2.9 GHz instantaneous frequency band. Under 300µs/10% pulse conditions it supplies a minimum of 500 W of peak output power with typical performance of 560 W, typically 12 dB gain and over 60 % efficiency. The device is rated for peak output power of 500 W with 10% duty factor and average power of 50W.
The IGN3135M130 operates over the 3.1–3.5 GHz instantaneous frequency band. Under 300µs / 20 % pulse conditions it supplies a minimum of 130 W of peak output power with typical performance of 150 W with 12dB gain. The device is rated for peak output power of 130W with 20% duty factor and average power of 26W.
When appropriately rated, both HEMTS are operable under a wide range of pulse widths and duty factors. Specified operation for both devices is with Class AB bias. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture.
