News Article
China uses Aixtron to move into GaN power electronics
Dynax Semiconductor is to receive its first Aixtron production system to manufacture gallium nitride on silicon carbide (SiC) and silicon substrates
Chinese firm, Dynax Semiconductor Inc. has placed its first purchase order for an Aixtron Close Coupled Showerhead (CCS) CRIUS MOCVD system.
Aixtron CCS system
The reactor will be used to produce GaN and related nitride semiconductor epitaxial layers on SiC and silicon substrates for microwave and power devices.
Aixtron says it will be the first system in China dedicated to GaN electronics.
After installation and commissioning the system is now ready to produce high quality GaN epi-wafers.
“This is an important step for us”, NaiQian Zhang, President and CEO of Dynax Semiconductors, comments. “High power and high efficiency GaN electronic devices are the key components for next generation power management and data communications. This disruptive technology will help us achieve a sustainable society. The Aixtron reactor is a proven system for this application".
Frank Wischmeyer, Vice President and Program Manager Power Electronics at Aixtron, says, “The Dynax technical team already has extensive experience with Aixtron’s CCS technology. We are looking forward to supporting the customer with our expertise on accelerating the GaN power device market introduction in China.”
Compared to conventional silicon devices, GaN electronic devices provide superior performance in RF and power electronic applications in terms of efficiency and power density.
But two major challenges have to be met.
Due to the strong lattice mismatch between GaN and foreign substrates, GaN has to be grown in a special process.
To compete with silicon devices, manufacturing costs have to be as low as possible which requires MOCVD technology to provide high uniformity and reproducibility.
Dynax Semiconductor Inc., Suzhou, was founded in 2011 to manufacture GaN electronic devices. The company is based in Kunshan, Jiangsu province in east China. Dynax produces electronic devices for electronics, data communications, automotives, and motor control markets.
Aixtron CCS system
The reactor will be used to produce GaN and related nitride semiconductor epitaxial layers on SiC and silicon substrates for microwave and power devices.
Aixtron says it will be the first system in China dedicated to GaN electronics.
After installation and commissioning the system is now ready to produce high quality GaN epi-wafers.
“This is an important step for us”, NaiQian Zhang, President and CEO of Dynax Semiconductors, comments. “High power and high efficiency GaN electronic devices are the key components for next generation power management and data communications. This disruptive technology will help us achieve a sustainable society. The Aixtron reactor is a proven system for this application".
Frank Wischmeyer, Vice President and Program Manager Power Electronics at Aixtron, says, “The Dynax technical team already has extensive experience with Aixtron’s CCS technology. We are looking forward to supporting the customer with our expertise on accelerating the GaN power device market introduction in China.”
Compared to conventional silicon devices, GaN electronic devices provide superior performance in RF and power electronic applications in terms of efficiency and power density.
But two major challenges have to be met.
Due to the strong lattice mismatch between GaN and foreign substrates, GaN has to be grown in a special process.
To compete with silicon devices, manufacturing costs have to be as low as possible which requires MOCVD technology to provide high uniformity and reproducibility.
Dynax Semiconductor Inc., Suzhou, was founded in 2011 to manufacture GaN electronic devices. The company is based in Kunshan, Jiangsu province in east China. Dynax produces electronic devices for electronics, data communications, automotives, and motor control markets.
