News Article
Toshiba GaN-on-Si white LED packages go to market
The process, developed by Toshiba and Bridgelux, will be used to produce chips manufactured from gallium nitride on 200mm silicon wafers
Toshiba Corporation will start sales of white LED packages that offer makers of general purpose and industrial LED lighting solutions a cost-competitive alternative to current LED packages.
Mass production will start this month.
LED chips are typically produced on expensive 2- to 4-inch sapphire substrates.
Toshiba white LED
Toshiba and Bridgelux have developed a process for manufacturing GaN LEDs on 200mm silicon wafers, which Toshiba has brought to a new production line at Kaga Toshiba Electronics Corporation. This is a discrete products manufacturing facility in northern Japan.
Mass production of packages using the new line's output starts this month.
Deployment of Toshiba and Bridgelux's new GaN-on-silicon technology to produce LED chips has allowed Toshiba to replace sapphire substrates and to produce the chips on a much more cost-competitive silicon substrate.
The low power consumption and long life of the white LED lighting is winning wide adoption in general purpose lighting, TV backlighting and other areas of application. In FY2011 the global market stood at 700 billion yen (approximately US$8.5 billion) and it is expected to almost double to 1,250 billion yen ($15.2 billion) in FY2016.
Going forward, Toshiba will promote product development and global sales toward securing a 10 percent share of the world market in FY2016.
The LEDs, known as the TL1F1 series, operate at 1W and measure 6.4 mm x 5.0 mm x 1.35 mm. The light flux is 112 lm at 350mA.
Mass Production is due to start in December 2012 and the planned production capability is 10,000,000 units per month.
Mass production will start this month.
LED chips are typically produced on expensive 2- to 4-inch sapphire substrates.
Toshiba white LED
Toshiba and Bridgelux have developed a process for manufacturing GaN LEDs on 200mm silicon wafers, which Toshiba has brought to a new production line at Kaga Toshiba Electronics Corporation. This is a discrete products manufacturing facility in northern Japan.
Mass production of packages using the new line's output starts this month.
Deployment of Toshiba and Bridgelux's new GaN-on-silicon technology to produce LED chips has allowed Toshiba to replace sapphire substrates and to produce the chips on a much more cost-competitive silicon substrate.
The low power consumption and long life of the white LED lighting is winning wide adoption in general purpose lighting, TV backlighting and other areas of application. In FY2011 the global market stood at 700 billion yen (approximately US$8.5 billion) and it is expected to almost double to 1,250 billion yen ($15.2 billion) in FY2016.
Going forward, Toshiba will promote product development and global sales toward securing a 10 percent share of the world market in FY2016.
The LEDs, known as the TL1F1 series, operate at 1W and measure 6.4 mm x 5.0 mm x 1.35 mm. The light flux is 112 lm at 350mA.
Mass Production is due to start in December 2012 and the planned production capability is 10,000,000 units per month.
