News Article
AlON slashes leakage current by 90 percent in SiC
Scientists have demonstrated a 50 percent improvement of the dielectric breakdown field in silicon carbide MOSFETS
A team composed of researchers from Osaka University, Kyoto University, Rohm and Tokyo Electron have succeeded in developing high-performance and high-reliability SiC MOSFETs.
The scientists implemented high-permittivity aluminium oxynitride (AlON) gate dielectrics.
The diagram below shows a conventional SiC MOSFET.
The researchers modified this structure by using AlON instead of SiO2 in the dark blue region shown in the schematic below.
Thanks to AlON high-k gate dielectrics, a 90 percent reduction in gate leakage current and 50 percent improvement of dielectric breakdown field were achieved.
The researchers say this development is certain to improve SiC MOSFETs and will contribute to realising a low carbon emission society.
This achievement was presented in International Electron Device Meeting (IEDM) by the IEEE on December 10th, 2012.
The scientists implemented high-permittivity aluminium oxynitride (AlON) gate dielectrics.
The diagram below shows a conventional SiC MOSFET.
The researchers modified this structure by using AlON instead of SiO2 in the dark blue region shown in the schematic below.
Thanks to AlON high-k gate dielectrics, a 90 percent reduction in gate leakage current and 50 percent improvement of dielectric breakdown field were achieved.
The researchers say this development is certain to improve SiC MOSFETs and will contribute to realising a low carbon emission society.
This achievement was presented in International Electron Device Meeting (IEDM) by the IEEE on December 10th, 2012.
