News Article
GT & Soitec to commercialise HVPE tool for GaN templates
The HVPE system is expected to lower the cost of III-nitride LED production and accelerate adoption in lighting and power electronics
GT Advanced Technologies (GT) and Soitec have signed a development and licensing agreement allowing GT to develop, manufacture and commercialise a high-volume, multi-wafer HVPE system.
The tool will be used to produce high-quality GaN epi layers on substrates used in the LED and other growth industries such as power electronics.
The higher growth rates and improved material properties made possible by the HVPE system are expected to significantly reduce process costs while boosting device performance compared with the traditional MOCVD process. Initial pre-payment of the licensing fees as outlined in the agreement is already underway, but further specific terms were not disclosed.
GT will develop, manufacture and commercialise the HVPE system incorporating Soitec Phoenix Labs' (a subsidiary of Soitec) unique and proprietary HVPE technology.
This will include a novel and advanced source delivery system that is expected to lower the costs of precursors delivered to the HVPE reactor. The HVPE system will enable the production of GaN template sapphire substrates on a large scale. The expected target date for the commercial availability of the HVPE system is the second half of 2014.
The tool will be used to produce high-quality GaN epi layers on substrates used in the LED and other growth industries such as power electronics.
The higher growth rates and improved material properties made possible by the HVPE system are expected to significantly reduce process costs while boosting device performance compared with the traditional MOCVD process. Initial pre-payment of the licensing fees as outlined in the agreement is already underway, but further specific terms were not disclosed.
GT will develop, manufacture and commercialise the HVPE system incorporating Soitec Phoenix Labs' (a subsidiary of Soitec) unique and proprietary HVPE technology.
This will include a novel and advanced source delivery system that is expected to lower the costs of precursors delivered to the HVPE reactor. The HVPE system will enable the production of GaN template sapphire substrates on a large scale. The expected target date for the commercial availability of the HVPE system is the second half of 2014.
