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Forepi orders multiple Aixtron CRIUS II-L reactors

The tools, which will be used to manufacture GaN (gallium nitride) UHB LEDs, shows great endorsement of previously ordered AIX G5 systems
In the third quarter of 2012, long-term customer Formosa Epitaxy Inc. (Forepi), Taiwan, placed a new order for multiple CRIUS II-L MOCVD production systems in a 69 x 2-inch configuration.

All systems will be used for the manufacturing of ultra-high brightness (UHB) GaN-based blue and white LEDs.



CRIUS II-L MOCVD reactor

Aixtron’s local service team started installing and commissioning the new systems in the fourth quarter of 2012 at Forepi’s new factory in the Pin-Jen industrial zone, Taiwan. Delivery will be completed in the second quarter of 2013. In May 2012, Forepi had already purchased several CRIUS II-XL and AIX G5 HT reactors.

“This new order reflects our on-going satisfaction with Aixtron’s products,” comments Forepi’s chairman Frank Chien. “Aixtron has proven itself as an excellent partner, providing superior customer care by responding to our requests and delivering the needed solutions. With short time-to-production, and highest performance and throughput, Aixtron’s latest MOCVD generations meet the specific challenges of larger wafers and maximum chip yields.”

All CRIUS II-L systems will be delivered with Aixtron’s new ARGUS Topside Temperature Control (TTC) system. The new method eliminates temperature variation within each run and run-to-run, enabling unmatched production yields.

“This latest multiple tool order reflects Forepi’s growth as a top-tier LED chip manufacturer. We are pleased to support this prized customer with our latest technology. Besides reactor size and design, we believe that successful in-situ measurement and control offer the greatest optimisation potential because they provide a direct impact on yields,” comments Christian Geng, General Manager Aixtron Taiwan.

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