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EPC to present GaN technology and applications at APEC 2013

The firm's CEO and applications experts will conduct a half-day seminar and technical presentations on gallium nitride FET technology and applications
Efficient Power Conversion Corporation (EPC), an innovator in enhancement-mode GaN on silicon (eGaN) power FETs, will be presenting an educational seminar and several application-focused technical presentations at APEC 2013.

The Applied Power Electronics and Exposition Conference (APEC) will be held in Long Beach, California from March 17th to 21st.

APEC, focuses on the practical and applied aspects of the power electronics business. It is one of the leading conferences for practicing power electronics professionals addressing a broad range of topics in the use, design, manufacture and marketing of all kinds of power electronics components and equipment.

"We are honoured that the technical review committee of APEC 2013 has selected EPC experts to conduct an educational seminar and to give technical papers focusing on GaN technology at their annual conference. This selection supports our belief that the superior performance of GaN technology has gained the interest and acceptance of power system design engineers," says Alex Lidow, EPC's co-founder and CEO.

Educational Seminar

GaN Transistors for Efficient Power Conversion                                       
Sunday, March 17th (S.7, 2:30 p.m. - 6:00 p.m.)

Expanding on the GaN FET technology textbook written by EPC, this seminar will explain how GaN High Electron Mobility Transistors (HEMT) work. This session will discuss how to use these devices including showing the drivers, layout, and thermal considerations for high performance and high frequency power conversion. To showcase the real-world value of GaN technology, several applications including high frequency envelope tracking (ET), Intermediate Bus Converters (IBC), and wireless power transmission will be presented. The seminar will conclude with a look at the future of this emerging displacement technology.

Technical Presentations Featuring GaN FETs by EPC Experts:

Roundtable Discussion

"Wide band-gap semiconductors - Prime time or promises?"                            
Presenter: Alex Lidow Tuesday, March 19th (Session 2, 5pm - 6:30 pm)

Technical Sessions

"Design of a High Frequency, Low Loss eGaN Converter with Reduced Parasitic Inductances" Presenters: David Reusch, Johan Strydom Wednesday, March 20th (DC-DC Converters, 2 pm - 5:30 pm)

"Using eGaN FETs for Envelope Tracking"                                         
Presenter: Johan Strydom Wednesday, March 20th (IS2.2.4, 8:30 am - 10:15 am)

"eGaN FETs Enable Low Power High Frequency Wireless Energy"                       
Presenter: Michael de Rooij Wednesday, March 20th, (IS2.2.3, 8:30 am - 10:15 am)

"eGaN FET based HF Resonant Converter"                                           
Presenter: David Reusch Thursday, March 21st (IS1.4.5, 8:30 am. - 11:30 am)

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