News Article
Fraunhofer IAF chooses Veeco GEN200 MBE system
The tool will be used for research and development of various antimonide and arsenide-based III-V optoelectronic devices
The Fraunhofer Institute for Applied Solid State Physics IAF, an institution specialising in the field of compound semiconductor research in Freiburg, Germany, has purchased a Veeco MBE GEN200 reactor.
According to Martin Walther, Head of Infrared Detectors Business Unit at Fraunhofer IAF, “We have been working with Veeco for more than a decade, and have had very good experiences with the existing Veeco MBE systems in our facility. Thus we decided in favour of Veeco’s fully automated production MBE systems as demand for epitaxial layers for antimonide based III-V optoelectronics has increased.”
Jim Northup, Vice President, General Manager of Veeco’s MBE Operations, adds, “This new purchase extends our longstanding collaborative relationship with Fraunhofer IAF, one of the world’s top research facilities in the field of III-V semiconductors. Our GEN200 is known for its lowest cost 4 x 4” epiwafer growth and it is the ideal tool to support Fraunhofer IAF’s expansion in growth services.”
The GEN200 is a cost-effective and highest capacity multi - 4” production MBE system. It is claimed to deliver superior throughput, long campaigns and excellent wafer quality in growing GaAs or InP-based wafers for such devices as pump lasers, VCSELs and HBTs.
According to Martin Walther, Head of Infrared Detectors Business Unit at Fraunhofer IAF, “We have been working with Veeco for more than a decade, and have had very good experiences with the existing Veeco MBE systems in our facility. Thus we decided in favour of Veeco’s fully automated production MBE systems as demand for epitaxial layers for antimonide based III-V optoelectronics has increased.”
Jim Northup, Vice President, General Manager of Veeco’s MBE Operations, adds, “This new purchase extends our longstanding collaborative relationship with Fraunhofer IAF, one of the world’s top research facilities in the field of III-V semiconductors. Our GEN200 is known for its lowest cost 4 x 4” epiwafer growth and it is the ideal tool to support Fraunhofer IAF’s expansion in growth services.”
The GEN200 is a cost-effective and highest capacity multi - 4” production MBE system. It is claimed to deliver superior throughput, long campaigns and excellent wafer quality in growing GaAs or InP-based wafers for such devices as pump lasers, VCSELs and HBTs.
