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TriQuint touts GaN Ku-band PA and integrated broadband amps

The gallium nitride amplifiers deliver performance and versatility for commercial and defence systems
TriQuint Semiconductor has released a novel broadband integrated packaged solution.

The device combines a limiter with a low-noise amplifier (LNA) for use in radar and electronic warfare along with a 25W Ku-band GaN RF power amplifier for satellite communications.

TriQuint's new 25W TGA2579-FL power amplifier (PA) is placed in a ground-signal ground package. This means it can be mounted on the top or underside of multi-layer circuit boards, giving designers the greatest possible flexibility. It provides 25W of saturated output power with 30 percent power added efficiency.

This 13.75-15.35GHz GaN RF PA has +48dBm Output Third Order Intercept Point (OIP3), 32dB small-signal gain and ground-signal-ground RF transitions for interfacing with coplanar waveguide circuit boards. With a 25V/1A DC bias, the TGA2579-FL comes in a 14-pin SMT package.



The TGA2543-SM's high gain and extremely wide operating bandwidth (4-20 GHz) provides broad versatility. It integrates limiting and LNA functions in a single package. Robust protection of sensitive receiver circuits and low-noise amplification are achieved in less space with fewer devices. The TGA2543-SM's hermetically-sealed, 22-lead 7x7mm ceramic surface mount QFN package meets MIL-STD 883H TM 1014.13 condition, A1/C1.

The device has RF input limiting of 4W CW (+36dBm), +17dBm mid-band gain, a 2dB noise figure, +28dBm (OIP3), adjustable gain control and a 5V/100mA DC bias.

TriQuint's Near Junction Thermal Transport (NJTT) GaN program was honoured in March with a 2013 CS Industry Award.

TriQuint says its NJTT initiative has produced the industry's first GaN-on-diamond HEMT transistors that significantly reduce heat while maintaining RF performance. TriQuint innovation can enable RF devices up to three times smaller than those currently available. This award is TriQuint's third consecutive honour for GaN research from international semiconductor industry leaders.

James L. Klein, Vice President and General Manager for Infrastructure and Defense Products, remarks that TriQuint’s efforts are unlocking the true potential of GaN. "We are enabling new generations of GaN devices that offer significant RF design and operational benefits for our commercial and defence customers," he says. TriQuint's design-ready GaN solutions are complemented by a full range of post-processing, packaging, test and foundry services.

The TGA2579-FL and TGM2543-SM are in production; samples and evaluation boards are available.

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