News Article
EPC unveils development board featuring 100V eGaN FETs
The development board features a dedicated gallium nitride driver to facilitate the rapid design of high frequency switching power conversion systems using the EPC2016 eGaN FET
Efficient Power Conversion Corporation (EPC) has introduced the EPC9010 development board to make it easier for engineers to start designing with a 100V enhancement-mode GaN (eGaN) field effect transistor (FET).
Relevant applications include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.
The EPC9010 development board has a 100V maximum device voltage, 7A maximum output current and half bridge with onboard gate drives, featuring the EPC2016 eGaN FET.
The purpose of this development board is to simplify the evaluation process of eGaN FETs by including all the critical components on a single board that can be easily connected into any existing converter.
The EPC9010 development board is 2” x 1.5” and contains two EPC2016 eGaN FETs in a half bridge configuration using the LM5113 gate driver from Texas Instruments, as well as supply and bypass capacitors.
The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.
The EPC9010 development boards are priced at $99.00 each and are available for immediate delivery from the Digi-Key website.
Relevant applications include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.
The EPC9010 development board has a 100V maximum device voltage, 7A maximum output current and half bridge with onboard gate drives, featuring the EPC2016 eGaN FET.
The purpose of this development board is to simplify the evaluation process of eGaN FETs by including all the critical components on a single board that can be easily connected into any existing converter.
The EPC9010 development board is 2” x 1.5” and contains two EPC2016 eGaN FETs in a half bridge configuration using the LM5113 gate driver from Texas Instruments, as well as supply and bypass capacitors.
The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.
The EPC9010 development boards are priced at $99.00 each and are available for immediate delivery from the Digi-Key website.
