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TriQuint reveals three GaAs RF PAs

The gallium arsenide power amplifiers are designed for commercial and defence applications
TriQuint Semiconductor has released three new packaged GaAs RF power amplifiers.

They deliver high output, gain and efficiency for commercial and defence applications including point-to-point microwave radio, radar, VSAT and related applications.

TriQuint’s new amplifiers feature low-loss, ground-signal-ground (GSG) RF transitions designed to interface with a coplanar waveguide multilayer PC circuit board for superior grounding.

The packaging enables TriQuint’s amplifiers to serve on either side of a PCB board, which facilitates a greater variety of component layout alternatives.

The new products will be on display along with other innovative RF solutions at WAMICON 2013 in Orlando, Florida at booth #15 between April 7th and 9th.The company will also display its latest GaN solutions that enable a wide range of communications, radar and defence applications with greater frequency coverage, high efficiency and superior gain.



Technical Details:

TGA2501-GSG

3.2W  (35dBm), 6-18 GHz RF power amplifier with 26dB small-signal gain, 19dB large-signal gain, 23% efficiency, 8V/1.2A DC bias, integrated DC blocking capacitors, 14-pin 11.38 x 17.32mm flange package.

TGA2536-FL

5.5W (37.4dBm), 13.5-16 GHz RF power amplifier with 25dB small-signal gain, 19dB large-signal gain, 20% efficiency, 8V/2.6A DC bias, integrated DC blocking capacitors, 14-pin 11.38 x 17.32mm flange package.

TGA2517-GSG

14W (41.6dBm), 7.5-11.5 GHz RF power amplifier with 30dB small-signal gain, 22dB large-signal gain, 25% efficiency, 12V/3A DC bias, integrated DC blocking capacitors, 14-pin 11.38 x 17.32mm flange package. ITAR controlled.

Samples and evaluation fixtures are available for all three of the newly released amplifiers.

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