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Cree works with Delta Energy with solar SiC

Cree's SiC MOSFET technology could significantly improve weight, cost and efficiency in PV inverters
Cree, and Delta Energy Systems say they have made a breakthrough in the photovoltaic (PV) inverter industry with the release of Delta’s new generation of solar inverters.

They utilise Cree's SiC power MOSFETs.

The use of SiC MOSFETs in the next-generation PV inverters can enable significant new milestones in power density, efficiency and weight.

“The next-generation PV inverters from Delta are designed to set a new milestone of power density by utilising SiC MOSFETs,” comments Klaus Gremmelspacher, head of research and development for PV inverters at Delta Energy Systems. “The SiC MOSFETs from Cree were essential for us to realise our goals for new, high-power inverters that are lightweight and have industry-leading efficiency.”

Cree released the first SiC MOSFETs in 2011 and dramatically improved second-generation SiC MOSFETs in 2013.

Now, as a milestone product announcement, Delta Energy Systems, a subsidiary of Delta Electronics Group, one of the world’s largestproviders of power management solutions, has incorporated Cree SiC MOSFETs into its next-generation solar power inverter.

Utilising 1200V SiC MOSFET’s in an 11kW PV inverter, Delta has already been able to extend the DC input voltage range while maintaining and even increasing the maximum efficiency of its previous products.

The Delta 11kW booster, which employs Cree’s SiC MOSFET and now has 1kV DC input instead of 900V, is targeted for release in Q2 2013.

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