News Article
CrystAl-N launches 2-inch bulk AlN
Highly transparent, 2-inch AlN promises to enhance the performance of RF devices and deep UV lasers and LEDs.
German AlN crystal maker CrystAl-N is shifting its production from 1-inch to 2-inch AlN and accepting pre-orders of the new material.
According to the company, which was founded in 2010 as spin-off of Friedrich-Alexander-University Erlangen-Nuremberg, AlN will boost the efficiency of deep UV LEDs, lasers and high-power, high-frequency devices as soon as its cost-performance ratio is competitive. Shifting production to larger substrates will help to realize this.
“After many years of R&D we finally managed to combine high uv transparency with suitable wafer size enabling a real commercial product,” remarked company CTO Boris Epelbaum. “Further diameter increase in our patented tungsten based furnaces is not limited as we are using SiC as initial seed. “
Besides diameter enlargement wafer polishing drastically improved as well. “The corresponding wafers feature surface roughness of less than 0.3 nm and are highly UV transparent”, says Octavian Filip, Director of Wafering.
AFM image (1 x 1 µm2) of a polished c-plane wafer. Ra surface roughness < 0.3 nm
low absorption coefficient values up to the band edge (peak at 2.8 eV - reason for yellowish coloration of bulk AlN grown by PVT)
According to the company, which was founded in 2010 as spin-off of Friedrich-Alexander-University Erlangen-Nuremberg, AlN will boost the efficiency of deep UV LEDs, lasers and high-power, high-frequency devices as soon as its cost-performance ratio is competitive. Shifting production to larger substrates will help to realize this.
“After many years of R&D we finally managed to combine high uv transparency with suitable wafer size enabling a real commercial product,” remarked company CTO Boris Epelbaum. “Further diameter increase in our patented tungsten based furnaces is not limited as we are using SiC as initial seed. “
Besides diameter enlargement wafer polishing drastically improved as well. “The corresponding wafers feature surface roughness of less than 0.3 nm and are highly UV transparent”, says Octavian Filip, Director of Wafering.
AFM image (1 x 1 µm2) of a polished c-plane wafer. Ra surface roughness < 0.3 nm
low absorption coefficient values up to the band edge (peak at 2.8 eV - reason for yellowish coloration of bulk AlN grown by PVT)
