News Article
Cree’s SiC module delivers higher performance
Silicon carbide three-phase power modules alleviate conventional design constraints. They are also claimed to be more reliable and cheaper than comparable silicon systems
Cree is introducing what it says is the industry’s first commercially available SiC six-pack power module in an industry standard 45mm package.
When replacing a silicon module with equivalent ratings, Cree’s six-pack module can reduce power losses by 75 percent, which leads to an immediate 70 percent reduction in the size of the heat sink or a 50 percent increase in power density.
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Cree SiC module
The new six-pack SiC module unlocks the traditional design constraints associated with power density, efficiency and cost, thereby enabling the designer to create high performance, reliable and low cost power conversion systems. When compared to state-of-the-art silicon modules, the SiC 1.2 kV, 50A modules deliver performance equivalent to silicon modules rated at 150A.
“The efficient switching of the SiC module allows us to use them with significantly less derating than silicon IGBTs,” states Jun Kang, research and applications manager, Yaskawa America, Inc. “This feature enables significantly higher frequency operation, which both increases fundamental output frequency and reduces passive component size in the motor drive.”
“Cree’s SiC power module family can also provide significant benefits to applications such as solar inverters, uninterruptible power supplies (UPS) and industrial power supplies,” explains Mrinal Das, product marketing manager, Cree Power and RF.
“Even when designers simply substitute Si modules with SiC in motor drive applications, the improved performance of SiC reduces power losses, leading to reduced cooling requirements and, in turn, to a reduction in size, weight, complexity and the overall cost of the power electronics system.”
The CCS050M12CM2 six-pack modules from Cree are available for immediate shipping through Digi-Key Corporation and Mouser Electronics. Gate driver ICs suitable for SiC MOSFETs are available from IXYS and Texas Instruments.
Complete gate driver boards (CRD-001) are available as samples from Cree upon request.
When replacing a silicon module with equivalent ratings, Cree’s six-pack module can reduce power losses by 75 percent, which leads to an immediate 70 percent reduction in the size of the heat sink or a 50 percent increase in power density.
Cree SiC module
The new six-pack SiC module unlocks the traditional design constraints associated with power density, efficiency and cost, thereby enabling the designer to create high performance, reliable and low cost power conversion systems. When compared to state-of-the-art silicon modules, the SiC 1.2 kV, 50A modules deliver performance equivalent to silicon modules rated at 150A.
“The efficient switching of the SiC module allows us to use them with significantly less derating than silicon IGBTs,” states Jun Kang, research and applications manager, Yaskawa America, Inc. “This feature enables significantly higher frequency operation, which both increases fundamental output frequency and reduces passive component size in the motor drive.”
“Cree’s SiC power module family can also provide significant benefits to applications such as solar inverters, uninterruptible power supplies (UPS) and industrial power supplies,” explains Mrinal Das, product marketing manager, Cree Power and RF.
“Even when designers simply substitute Si modules with SiC in motor drive applications, the improved performance of SiC reduces power losses, leading to reduced cooling requirements and, in turn, to a reduction in size, weight, complexity and the overall cost of the power electronics system.”
The CCS050M12CM2 six-pack modules from Cree are available for immediate shipping through Digi-Key Corporation and Mouser Electronics. Gate driver ICs suitable for SiC MOSFETs are available from IXYS and Texas Instruments.
Complete gate driver boards (CRD-001) are available as samples from Cree upon request.
