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GCS develops two InGaP HBT foundry processes

firm has launched a couple of indium gallium phosphide processes to address the VCO for point-to-point and 12V PA for small cell PA infrastructure markets
Global Communication Semiconductors, LLC. (GCS), a pure-play III-V compound semiconductor wafer foundry, has unveiled proprietary InGaP HBT D5 and P7 foundry processes.

"The D5 InGaP HBT process offers an advantage of a wider (2 x) frequency tuning range, in addition to maintaining the super low phase noise performance offered by our already successful D1 VCO process," comments Brian Ann, Chief Executive Officer of GCS.

"P7 InGaP HBT process, with a BVceo of 28v, was developed to address the small cell base station infrastructure PA requirement of 12V operation. The process can be used to develop linear PA with an output power of 1, 2, 4, 8, 10W, etc.As an example, a 2W PA has demonstrated a power density of 0.917mW/um2 with a power added efficiency of over 65percent. These two new processes expand our InGaP HBT process portfolio to a total of seven processes which are sufficient to address any wireless infrastructure PA and VCO requirements," continues Brian Ann.

GCS will exhibit at the IMS 2013 in Seattle, Washington June 4th to 6th. Latest data sheets and product information will be available at GCS booth #1941.


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