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NASA to branch out into multiple compound semiconductors

Using MBE or MOCVD equipment, NASA Langley is seeking a facility for III-V semiconductor epilayer growth
NASA LaRC says it will fabricate and deliver a total of 60 wafers during 6 months.

Among these wafers, at least twenty wafers will be processed to fabricate multiples of working devices. The device fabrication will use silicon oxide/nitride deposit, photo-lithography with mask-aligner, wet and dry etching and thermal diffusion.


The company says that it wants contractors to provide III-V compound semiconductors which include:

1. GaAs, InAs, AlAs

2. GaP, InP, AlP

3. GaAsN, InGaAsN

The service provider should also be prepared to provide the following:

1. X-ray diffraction analysis

2. Standard CMOS micro-fabrication capability

3. An additional nitrogen plasma source as well as III-V compound semiconductor sources

4. P-type and n-type dopant control (effusion cells or similar)

5. In-situ characterisation during epi-layer growth

6. Metallisation capability

7. Automatic growth rate and doping level control


Special substrate wafers for III-V compound semiconductor epi-layer growth will be provided by NASA Langley. Device structure and epitaxy growth methods will be guided by the NASA Langley's research team.

The intellectual properties of patented growth methods, characterisation methods, epilayer structures, and device structures & fabrication methods will belong to NASA Langley. And NASA says no intellectual properties will be exchanged.


The period of performance will be 6 months after receipt of order.

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