News Article
TriQuint GaN PA chosen by RF-Lambda
The firm's gallium nitride devices will be used for defence, industrial, aerospace and commercial applications
TriQuint Semiconductor's, GaN power amplifiers have been selected by RF-Lambda.
RF-Lambda is a global microwave products manufacturer, and has developed a new line of high power based on TriQuint GaN transistors. The firm's latest products are currently being qualified in commercial 4G systems, a defence flight system and other defence and aerospace projects.
Reducing part counts and maintaining performance was central to RF-Lambda’s decision, says R&D Director Michael Liu. “We formerly supplied a key customer with two separate GaAs amplifiers to cover two bands. By using TriQuint GaN, we were able to replace those with a single GaN HEMT and cover the full frequency range."
Liu adds,"This increased design flexibility while decreasing production variation. Our customers also benefit by using software to switch bands rather than physically changing hardware, while still achieving necessary power. Our products support some of the world’s leading defence and commercial communications companies.”
RF-Lambda is developing other new power amplifiers based upon TriQuint GaN transistors including a 1-18 GHz, 50 Watt device and 20W/40W solutions for 0.1-6 GHz as well as the RFLUPA0706GE (0.7-6 GHz) 7W amplifier.
James L. Klein, TriQuint Vice President and General Manager for Infrastructure and Defence Products comments, “TriQuint is glad to play a role in this new line of high-power amplifiers. TriQuint GaN products offer important size, weight and power advantages that the defence industry was fast to appreciate. We now see more commercial applications using GaN thanks to its advantages, and we look forward to supporting RF-Lambda’s new programs.”
Market analyst Strategy Analytics foresees significant GaN growth. “While defence supported GaN in many applications, communication infrastructure utilisation is growing fast. Sat-Com, power and other infrastructure markets are ramping to higher revenues. Strategy Analytics forecasts that the market for GaN microelectronic devices will grow with a compound average annual growth rate of over 34% to approximately $186 million by 2015,” says Eric Higham, Director of Semiconductor Practice.
Technical Details
TriQuint’s new GaN high electron mobility transistor (HEMT) devices offer optimized power and efficiency at high drain voltage operating conditions.
RF-Lambda chose the T2G6001528-Q3, which offers typical power added efficiency greater than 50 percent at 15dB gain; its performance can reduce the number of transistors in a design, which also benefits heat management. These advantages can lower part counts, reduce board space and lower overall system costs.
The T2G6001528-Q3 is offered in a low thermal resistance, flangeless package. Samples and evaluation boards are now available.
RF-Lambda is a global microwave products manufacturer, and has developed a new line of high power based on TriQuint GaN transistors. The firm's latest products are currently being qualified in commercial 4G systems, a defence flight system and other defence and aerospace projects.
Reducing part counts and maintaining performance was central to RF-Lambda’s decision, says R&D Director Michael Liu. “We formerly supplied a key customer with two separate GaAs amplifiers to cover two bands. By using TriQuint GaN, we were able to replace those with a single GaN HEMT and cover the full frequency range."
Liu adds,"This increased design flexibility while decreasing production variation. Our customers also benefit by using software to switch bands rather than physically changing hardware, while still achieving necessary power. Our products support some of the world’s leading defence and commercial communications companies.”
RF-Lambda is developing other new power amplifiers based upon TriQuint GaN transistors including a 1-18 GHz, 50 Watt device and 20W/40W solutions for 0.1-6 GHz as well as the RFLUPA0706GE (0.7-6 GHz) 7W amplifier.
James L. Klein, TriQuint Vice President and General Manager for Infrastructure and Defence Products comments, “TriQuint is glad to play a role in this new line of high-power amplifiers. TriQuint GaN products offer important size, weight and power advantages that the defence industry was fast to appreciate. We now see more commercial applications using GaN thanks to its advantages, and we look forward to supporting RF-Lambda’s new programs.”
Market analyst Strategy Analytics foresees significant GaN growth. “While defence supported GaN in many applications, communication infrastructure utilisation is growing fast. Sat-Com, power and other infrastructure markets are ramping to higher revenues. Strategy Analytics forecasts that the market for GaN microelectronic devices will grow with a compound average annual growth rate of over 34% to approximately $186 million by 2015,” says Eric Higham, Director of Semiconductor Practice.
Technical Details
TriQuint’s new GaN high electron mobility transistor (HEMT) devices offer optimized power and efficiency at high drain voltage operating conditions.
RF-Lambda chose the T2G6001528-Q3, which offers typical power added efficiency greater than 50 percent at 15dB gain; its performance can reduce the number of transistors in a design, which also benefits heat management. These advantages can lower part counts, reduce board space and lower overall system costs.
The T2G6001528-Q3 is offered in a low thermal resistance, flangeless package. Samples and evaluation boards are now available.
