+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
 
News Article

Cree Licenses GaN Device Patents to Transphorm

Cree, today announced that it signed a non-exclusive worldwide patent license agreement with Transphorm, that provides access to Cree's extensive family of patents related to GaN high electron mobility transistor and GaN Schottky diode devices for use in the field of power conversion devices. The licensed family of patents addresses various aspects of making GaN power devices, including nitride materials, HEMT and Schottky diode designs and processing technology. While GaN HEMTs are already used extensively in RF markets by Cree and others, their use in power conversion markets has been targeted by Transphorm and a number of other companies.
"Over the last 17 years, Cree has invented technology that enabled the successful introduction of reliable GaN HEMT devices in the RF market," stated John Palmour, Cree CTO, Power & RF and one of Cree's co-founders. "Many of these inventions can and are expected to be used by others to manufacture devices in the burgeoning area of GaN power-management systems."



www.cree.com/about-cree/licensing/licensing-programs


www.transphormusa.com.

 

×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: