News Article
Vishay launches AlGaAs 940nm IR emitter
The aluminium gallium arsenide device is suited to fast gesture remote control applications
Vishay Intertechnology is broadening its optoelectronics portfolio with the introduction of a new high-power, high-speed 940 nm infrared emitter for gesture remote control applications.
The AlGaAs VSLB9530S module offers a radiant power of 40 mW at 100 mA, and is offered in a clear molded, leaded TELUX package with an oval lens designed to support an angle of half intensity of +/- 18° in the vertical direction and +/- 36° in the horizontal direction.
The VSLB9530S is built on AIGaAs multi-quantum well (MQW) technology. The device's angular distribution makes it ideal for gesture remote control of televisions and gaming systems, where it provides excellent spectral matching with silicon photodetectors.
The IR emitter's wider angle in the horizontal view helps maintain position flexibility for users, while the narrower angle in the vertical plane focuses the distributed radiant intensity.
The TELUX package of the VSLB9530S measures 7.62 mm by 7.62 mm by 4.6 mm and provides a low thermal resistance of 200 K/W.
Vishay says while standard IR emitters typically offer drive currents to 100 mA, the low thermal resistivity of the VSLB9530S allows continuous drive currents up to 150 mA, which pushes the achievable radiant intensity to 60 mW/sr at 150 mA. The device offers high modulation bandwidth of 24 MHz and is suitable for high pulse current operation.
The infrared emitter offers fast switching speeds down to 15ns, low forward voltage down to 1.31 V at 150 mA, and an operating temperature range from -40°C to +95°C. Compatible with wave solder processes according to CECC 00802, the VSLB9530 is compliant to RoHS Directive 2011/65/EU, halogen-free per JEDEC JS709A, and conforms to Vishay's "Green" standards.
Samples and production quantities of the new infrared emitters are available now, with lead times of six to eight weeks for large orders.
Vishay Intertechnology, Inc., manufactures discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors).
The AlGaAs VSLB9530S module offers a radiant power of 40 mW at 100 mA, and is offered in a clear molded, leaded TELUX package with an oval lens designed to support an angle of half intensity of +/- 18° in the vertical direction and +/- 36° in the horizontal direction.
The VSLB9530S is built on AIGaAs multi-quantum well (MQW) technology. The device's angular distribution makes it ideal for gesture remote control of televisions and gaming systems, where it provides excellent spectral matching with silicon photodetectors.
The IR emitter's wider angle in the horizontal view helps maintain position flexibility for users, while the narrower angle in the vertical plane focuses the distributed radiant intensity.
The TELUX package of the VSLB9530S measures 7.62 mm by 7.62 mm by 4.6 mm and provides a low thermal resistance of 200 K/W.
Vishay says while standard IR emitters typically offer drive currents to 100 mA, the low thermal resistivity of the VSLB9530S allows continuous drive currents up to 150 mA, which pushes the achievable radiant intensity to 60 mW/sr at 150 mA. The device offers high modulation bandwidth of 24 MHz and is suitable for high pulse current operation.
The infrared emitter offers fast switching speeds down to 15ns, low forward voltage down to 1.31 V at 150 mA, and an operating temperature range from -40°C to +95°C. Compatible with wave solder processes according to CECC 00802, the VSLB9530 is compliant to RoHS Directive 2011/65/EU, halogen-free per JEDEC JS709A, and conforms to Vishay's "Green" standards.
Samples and production quantities of the new infrared emitters are available now, with lead times of six to eight weeks for large orders.
Vishay Intertechnology, Inc., manufactures discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors).
