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IXYS Introduces Silicon Carbide High Power Diodes

The SiC diode modules are suited to applications such as MHz switch mode power supplies, high frequency and resonant converters as well as rectifier circuits
IXYS Corporation's Colorado division has introduced the SS150 and SS275 series high power SiC diodes.

Three diode configurations provide designers with flexible connection and layout options.

Packaged in low inductance, surface mount DE Series package, these products provide excellent switching performance.

The SS150 and SS275 are both available in 600V, 10A and 1200V, 5A ratings. Standard internal configurations include:

    TI – Triple Independent - no common connections

    TA – Triple Anode - anodes are tied together

    TC – Triple Cathode - cathodes are tied together

The SS150 and SS275 SiC diode modules are ideal for applications such as MHz switch mode power supplies, high frequency and resonant converters as well as rectifier circuits.

The use of SiC allows extremely fast switching, high frequency operation, with zero recovery and temperature independent behaviour. Coupled with our low inductance RF package, these diodes can be utilised in any number of fast switching diode circuits or high frequency converter applications.

SS150 & SS275 Features:

    Surface Mount Package

    600V, 10A and 1200V, 5A Available

    Zero Reverse Recovery

    Zero Forward Recovery

    High Frequency Operation

    Temperature Independent Behavior

    Low Inductance

    Positive Temperature Coefficient for Vf

“The SS150 and SS275 High Power SiC Diode Modules allow designers more flexible design options with high frequency applications," comments Stephen Krausse, General Manager of IXYS Colorado.

The SS150 and SS275 high power SiC diode modules are available directly from IXYS Colorado.



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