News Article
Imec and Veeco unite on GaN-on-Si development
The gallium nitride on silicon R&D will concentrate on LED and power electronics applications
Nanoelectronics research centre imec of Belgium and Veeco Instruments are collaborating on a project aimed at lowering the cost of producing gallium nitride-on-silicon based power devices and LEDs.
Barun Dutta, imec’s Chief Scientist, comments, “The productivity, repeatability, uniformity and crystal quality of Veeco’s MOCVD equipment has been instrumental in helping us meet our development milestones on GaN-on-Si for power and LED applications.
The device performance enabled by the epi has helped us realise state-of-the-art D-mode (depletion mode) and E-mode (enhancement mode) power devices. Our goal is to establish an entire manufacturing infrastructure that allows GaN-on-Si to be a competitive technology.”
Imec’s multi-partner GaN-on-Si research and development program gathers the industry to jointly develop world-class GaN LED and power devices on 200 mm silicon substrates compatible with a 200 mm CMOS-compatible infrastructure. By joining forces at imec, companies share costs, talent and intellectual property to develop advanced technologies and bring them to the market faster.
Jim Jenson, Senior Vice President, General Manager, Veeco MOCVD, says, “We have been working with imec on this program since 2011 and are encouraged by our progress. Our work is mutually rewarding, as we are both focused on being able to realize lower costs while maintaining world-class performance on GaN-on-Si devices. This technology can be used to create lower cost LEDs that enable solid state lighting, more efficient power devices for applications such as power supplies and adapters, PV inverters for solar panels, and power conversion for electric vehicles.”
Veeco’s MOCVD equipment incorporates the firm's Uniform FlowFlange technology for superior uniformity and excellent run-to-run repeatability. Low maintenance TurboDisc technology enables highest system availability, excellent particle performance and high throughput.
Barun Dutta, imec’s Chief Scientist, comments, “The productivity, repeatability, uniformity and crystal quality of Veeco’s MOCVD equipment has been instrumental in helping us meet our development milestones on GaN-on-Si for power and LED applications.
The device performance enabled by the epi has helped us realise state-of-the-art D-mode (depletion mode) and E-mode (enhancement mode) power devices. Our goal is to establish an entire manufacturing infrastructure that allows GaN-on-Si to be a competitive technology.”
Imec’s multi-partner GaN-on-Si research and development program gathers the industry to jointly develop world-class GaN LED and power devices on 200 mm silicon substrates compatible with a 200 mm CMOS-compatible infrastructure. By joining forces at imec, companies share costs, talent and intellectual property to develop advanced technologies and bring them to the market faster.
Jim Jenson, Senior Vice President, General Manager, Veeco MOCVD, says, “We have been working with imec on this program since 2011 and are encouraged by our progress. Our work is mutually rewarding, as we are both focused on being able to realize lower costs while maintaining world-class performance on GaN-on-Si devices. This technology can be used to create lower cost LEDs that enable solid state lighting, more efficient power devices for applications such as power supplies and adapters, PV inverters for solar panels, and power conversion for electric vehicles.”
Veeco’s MOCVD equipment incorporates the firm's Uniform FlowFlange technology for superior uniformity and excellent run-to-run repeatability. Low maintenance TurboDisc technology enables highest system availability, excellent particle performance and high throughput.
