News Article
PVA TePla brings SiC crystals into mass production
The baSiC-T tool is suited for the growth of silicon carbide for high-performance electronics
SiC crystals are mainly required by customers working in high-tech markets.
Typical applications include high-performance electronics such as hybrid and electric cars, air conditioning systems, LED applications and DC/AC converters for photovoltaics. The major advantage in SiC material lies in the enormous energy-saving potential of over 40 percent compared to conventional silicon components.
In addition to this, the future will bring completely new prospects in the semiconductor industry as the product can also be used at high temperatures and high voltages in excess of 10,000 volts; this dramatically exceeds the potential of the silicon used today.
Modular structure and high degree of automation
The design of the innovative crystallisation system 'baSiC-T' is based on a modular concept and allows substrates with a diameter of up to 150 mm to be used. Low operating costs and a high degree of automation in the baSiC-T facilitate inexpensive mass production of SiC.
Successful use in industrial production
Systems to manufacture SiC crystals have already been delivered to several customers in Europe and Asia and been successfully accepted, providing proof of the systems' outstanding performance.
New Generation SiC PVT Crystal Growth Furnace
In addition to the baSiC-T, a series of other PVA TePla systems are already being used in the field of power electronics. The SiCube is an industrially tested system for SiC volume crystal production by means of PVT and HTCVD. The firm's Floatzone (FZ35) and Czochralski (EKZ) systems are used to crystallise high-purity silicon.
The recycling of susceptors using GaN epitaxy processes is performed in special PVA TePla vacuum furnaces. Different innovative metrology technologies for non destructive quality control are also available.
Typical applications include high-performance electronics such as hybrid and electric cars, air conditioning systems, LED applications and DC/AC converters for photovoltaics. The major advantage in SiC material lies in the enormous energy-saving potential of over 40 percent compared to conventional silicon components.
In addition to this, the future will bring completely new prospects in the semiconductor industry as the product can also be used at high temperatures and high voltages in excess of 10,000 volts; this dramatically exceeds the potential of the silicon used today.
Modular structure and high degree of automation
The design of the innovative crystallisation system 'baSiC-T' is based on a modular concept and allows substrates with a diameter of up to 150 mm to be used. Low operating costs and a high degree of automation in the baSiC-T facilitate inexpensive mass production of SiC.
Successful use in industrial production
Systems to manufacture SiC crystals have already been delivered to several customers in Europe and Asia and been successfully accepted, providing proof of the systems' outstanding performance.
New Generation SiC PVT Crystal Growth Furnace
In addition to the baSiC-T, a series of other PVA TePla systems are already being used in the field of power electronics. The SiCube is an industrially tested system for SiC volume crystal production by means of PVT and HTCVD. The firm's Floatzone (FZ35) and Czochralski (EKZ) systems are used to crystallise high-purity silicon.
The recycling of susceptors using GaN epitaxy processes is performed in special PVA TePla vacuum furnaces. Different innovative metrology technologies for non destructive quality control are also available.
