News Article
GaN Systems appoints advisor for gallium nitride power supplies
Specialist US engineering consultancy Vqdot will bring expertise to new generation products at GaN Systems
GaN Systems, a developer of power switching semiconductors, has appointed US engineering consultancy Vqdot as an Applications Development Partner.
Michigan-based Vqdot specialises in the development and testing of high-performance power supplies and will partner with GaN Systems to advise companies on the use of GaN power semiconductors across a broad range of applications.
Girvan Patterson, CEO of GaN Systems comments, "We have appointed Vqdot due to its expertise across numerous application areas, including RF power, switching power supplies, and advanced power conversion applications. Its team is experienced in exploring novel applications for new power technologies and brings a wealth of advice and expertise to manufacturers looking to gain competitive advantage through the early adoption of gallium nitride power semiconductors."
Luke Raymond, CEO and Co-founder Vqdot adds, "Gallium Nitride devices promise significant advantages over traditional silicon semiconductors, including higher electric breakdown characteristics, many times the band-gap and exceptional carrier mobility."
Raymond continues, "GaN devices are projected to secure a significant portion of the silicon-based semiconductor market within the next three to five years and will enable power electronics to become smaller, lighter and more efficient. We are excited to be working with GaN Systems and to be bringing gallium nitride’s superior performance advantages and clean technology to next generation products".
To overcome silicon’s limitations in switching speed, temperature, voltage and current, GaN Systems develops the most complete range of gallium nitride power switching solutions for a variety of markets.
The firm's unique Island Technology addresses today’s cost, performance, and manufacturability related challenges of GaN resulting in devices that are up to four times smaller and four times more efficient than traditional design approaches.
Michigan-based Vqdot specialises in the development and testing of high-performance power supplies and will partner with GaN Systems to advise companies on the use of GaN power semiconductors across a broad range of applications.
Girvan Patterson, CEO of GaN Systems comments, "We have appointed Vqdot due to its expertise across numerous application areas, including RF power, switching power supplies, and advanced power conversion applications. Its team is experienced in exploring novel applications for new power technologies and brings a wealth of advice and expertise to manufacturers looking to gain competitive advantage through the early adoption of gallium nitride power semiconductors."
Luke Raymond, CEO and Co-founder Vqdot adds, "Gallium Nitride devices promise significant advantages over traditional silicon semiconductors, including higher electric breakdown characteristics, many times the band-gap and exceptional carrier mobility."
Raymond continues, "GaN devices are projected to secure a significant portion of the silicon-based semiconductor market within the next three to five years and will enable power electronics to become smaller, lighter and more efficient. We are excited to be working with GaN Systems and to be bringing gallium nitride’s superior performance advantages and clean technology to next generation products".
To overcome silicon’s limitations in switching speed, temperature, voltage and current, GaN Systems develops the most complete range of gallium nitride power switching solutions for a variety of markets.
The firm's unique Island Technology addresses today’s cost, performance, and manufacturability related challenges of GaN resulting in devices that are up to four times smaller and four times more efficient than traditional design approaches.
