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GeneSiC launches variety of bare dies of up to 8000 V

The company's high voltage circuits and assemblies will benefit from silicon carbide chips that offer unprecedented voltage ratings and ultra-high speed switching

GeneSiC has announced the immediate availability of 8000 V SiC PiN rectifiers, 3300 V SiC Schottky rectifiers and 6500 V SiC thyristors in bare die format.

These products represent one of the highest voltage set of SiC devices on the market. The chips are specifically targeted towards oil and gas instrumentation, voltage multiplier circuits and high voltage assemblies.

Contemporary ultra-high voltage circuits suffer from low circuit efficiencies and large sizes because the reverse recovery currents from silicon rectifiers discharge the parallel connected capacitors. At higher rectifier junction temperatures, this situation worsens further since the reverse recovery current in silicon rectifiers increases with temperature.

With thermally constraints high voltage assemblies, junction temperatures rise quite easily even when modest currents are passed. High voltage SiC rectifiers offer unique characteristics that promises to revolutionise the high voltage assemblies.

GeneSiC's 8000 V and 3300 V Schottky rectifiers feature zero reverse recovery current that does not change with temperature. This relatively high voltage in a single device allows a reduction in voltage multiplication stages required in typical high voltage generator circuits, through use of higher AC input voltages.

The near-ideal switching characteristics allow the elimination/dramatic reduction of voltage balancing networks and snubber circuits. 8000 V PiN rectifiers offer higher current levels and higher operating temperatures. 6500 V SiC thyristor chips are also available to accelerate R&D of new systems.

"These products showcase GeneSiC's strong lead in the development of SiC chips in the multi-kV ratings. We believe the 8000 V rating goes beyond what silicon devices can offer at rated temperatures, and will allow significant benefits to our customers. GeneSiC's low VF, low capacitance SiC rectifiers and thyristors will enable system level benefits not possible before" says Ranbir Singh, President of GeneSiC Semiconductor.

Specifications of GeneSiC's latest devices are listed below.

8000 V/2 A SiC Bare Die PiN Rectifier Technical Highlights

    • Tjmax = 250oC

    • Reverse Leakage Currents < 50 µA at 175oC

    • Reverse Recovery Charge 558 nC (typical)


8000 V/50 mA SiC Bare Die Schottky Rectifier Technical Highlights

    • Total Capacitance 25 pF (typical, at -1 V, 25oC)

    • Positive temperature coefficient on VF

    • Tjmax = 175oC


6500 V SiC Thyristor Bare Die Technical Highlights

    • Three offerings - 80 Amperes (GA080TH65-CAU); 60 Amperes (GA060TH65-CAU); and 40 Amperes (GA040TH65-CAU)

    • Tjmax = 200oC

    3300 V/0.3 A SiC Bare Die Rectifier Technical Highlights

    • On-state Drop of 1.7 V at 0.3 A

    • Positive temperature coefficient on VF

    • Tjmax = 175oC

    • Capacitive charge 52 nC (typical)

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