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Hamamatsu unveils novel 2D InGaAs image sensor

The indium gallium arsenide device complements the firm's existing range of high performance linear and area image sensors
Hamamatsu Photonics is introducing the G12242-0707W, a brand new 128 x 128 pixel two dimensional InGaAs image sensor.

The G12242-0707W consists of a CMOS readout integrated circuit (ROIC) and a back illuminated InGaAs photodiode array, which are connected via indium bumps on a hybrid structure. The device features simultaneous charge integration, a 5MHz video data rate and a maximum frame rate of 258 fps. Also included within the ROIC is a timing generator to allow simplified operation.

G12242-0707W InGaAs image sensor

Featuring 20µm by 20µm pixels with a 20µm pitch, the G12242-0707W offers high sensitivity in the 0.95µm to 1.7µm infrared region, with excellent linearity characteristics. Housed in a TO-8 package together with a two-stage thermoelectric cooler, the G12242-0707W exhibits a low dark current and high signal-to-noise ratio, allowing the sensor to be used in demanding imaging applications.

The company says the G12242-0707W is a low cost solution to a wide range of industrial applications, including low resolution thermal imaging, laser beam profiling, NIR image detection, foreign object detection and many more.

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