News Article
Hittite GaAs amplifiers target radar, PtP and VSAT markets
The new 2W gallium arsenide based power amplifier & analogue VGA cover 27.5 to 31 GHz
Hittite Microwave Corporation is launching a new GaAs pHEMT MMIC power amplifier and an analogue variable gain amplifier.
They are ideal for Ka-band VSAT (Very Small Aperture Terminal), high capacity microwave radio and radar systems in the 27.5 to 31 GHz frequency range. VSAT is a device - known as a small private earth station - that is used to transmit & receive data signal through a satellite.
The HMC7441 is a three-stage GaAs pHEMT Power Amplifier which operates between 27.5 and 31 GHz. The amplifier provides 23 dB of gain and +34 dBm of saturated output power at 25 percent PAE from a 6V supply. With an excellent output IP3 of +38 dBm, the HMC7441 power amplifier is ideal for linear applications demanding +34 dBm of efficient saturated output power. The RF I/Os are DC blocked and matched to 50 Ω for ease of integration into Multi-Chip-Modules (MCMs).
Hittite HMC74411 GaAs pHEMT PA and HMC6187LP4E GaAs MMIC pHEMT analogue VGA
The HMC6187LP4E is a GaAs MMIC pHEMT analogue variable gain amplifier and/or driver amplifier which operates between 27 and 31.5 GHz and delivers excellent gain flatness. This amplifier provides up to 19 dB of gain, +24 dBm output P1dB, and +31 dBm of output IP3 at maximum gain, while requiring 230 mA from a +5V supply. A gain control voltage (Vctrl) is provided to allow variable gain control up to 13 dB. The HMC6187LP4E is housed in a RoHS compliant 4 x 4 mm plastic QFN leadless package and is compatible with high volume surface mount manufacturing.
Both products complement Hittite’s extensive line of microwave power amplifiers and analogue VGAs which provide continuous frequency coverage from 0.01 to 86 GHz. Samples are available from stock and can be ordered via the company's e-commerce site or via direct purchase order.
Hittite Microwave Corporation is q designer and manufacturer of high performance integrated circuits, or ICs, modules, subsystems and instrumentation for technically demanding digital, RF, microwave and millimetre wave applications covering DC to 110 GHz.
They are ideal for Ka-band VSAT (Very Small Aperture Terminal), high capacity microwave radio and radar systems in the 27.5 to 31 GHz frequency range. VSAT is a device - known as a small private earth station - that is used to transmit & receive data signal through a satellite.
The HMC7441 is a three-stage GaAs pHEMT Power Amplifier which operates between 27.5 and 31 GHz. The amplifier provides 23 dB of gain and +34 dBm of saturated output power at 25 percent PAE from a 6V supply. With an excellent output IP3 of +38 dBm, the HMC7441 power amplifier is ideal for linear applications demanding +34 dBm of efficient saturated output power. The RF I/Os are DC blocked and matched to 50 Ω for ease of integration into Multi-Chip-Modules (MCMs).
Hittite HMC74411 GaAs pHEMT PA and HMC6187LP4E GaAs MMIC pHEMT analogue VGA
The HMC6187LP4E is a GaAs MMIC pHEMT analogue variable gain amplifier and/or driver amplifier which operates between 27 and 31.5 GHz and delivers excellent gain flatness. This amplifier provides up to 19 dB of gain, +24 dBm output P1dB, and +31 dBm of output IP3 at maximum gain, while requiring 230 mA from a +5V supply. A gain control voltage (Vctrl) is provided to allow variable gain control up to 13 dB. The HMC6187LP4E is housed in a RoHS compliant 4 x 4 mm plastic QFN leadless package and is compatible with high volume surface mount manufacturing.
Both products complement Hittite’s extensive line of microwave power amplifiers and analogue VGAs which provide continuous frequency coverage from 0.01 to 86 GHz. Samples are available from stock and can be ordered via the company's e-commerce site or via direct purchase order.
Hittite Microwave Corporation is q designer and manufacturer of high performance integrated circuits, or ICs, modules, subsystems and instrumentation for technically demanding digital, RF, microwave and millimetre wave applications covering DC to 110 GHz.
