News Article
Riber bags order for MBE research reactor in France
The Riber MBE412 system sold to the IES offers a technique for processing 4-inch substrates for the controlled development of III-V semiconductor-based nanostructures
Riber has announced the sale to the IES electronics institute in Montpellier (France) of an MBE412 III-V system, and of a major upgrade for an existing Compact21 system.
MBE412 System
These acquisitions will further strengthen and renew the fleet of equipment in place at the IES, a joint research unit involving Université Montpellier 2 and the Institute for Engineering and Systems Sciences (INSIS), which is part of the French national centre for scientific research (CNRS).
Riber's MBE 412 is suited the low-cost growth of arsenides, phosphides, antimonides, nitride, oxides and silicon germanium films on a single 4-inch wafer.
This versatile machine produces film thickness uniformities of less than one percent and features 12 cell ports symmetrically distributed around the chamber. These ports can be mounted with a vast range of sources, including effusion cells, crackers, plasma sources, gasinjectors, and electron-beam-heated sources.
They are being funded by the "equipment for excellence" (EquipEx) program in connection with France's "Investments for the Future" initiative.
This equipment will contribute towards improving the research capabilities of the "nanoMIR" research group within the IES, a world-leading group for III-V semiconductor components within the GaSb antimonides sector.
More specifically, Eric Tournié, who heads up this group, has confirmed that “this equipment will make it possible to further strengthen the work carried out on innovative optoelectronic components, laser diodes and photodetectors, operating in infrared, as well as the work on their integration with silicon, the core technology for electronics.
The applications for these components include major economic sectors (photonics, defence, telecommunications, etc.) and societal sectors (environment, health, etc.).”
Eric Tournié has also confirmed that, “in addition to outstanding performance capabilities, the Riber MBE412 system sold to the IES offers very high modularity and a unique technique for processing large-format substrates for the controlled development of III-V semiconductor-based nanostructures. The refurbishment of the IES' Compact21 reactor will transform it into a totally new, modular cluster system, with an identical configuration to that of the MBE412 system.”
This equipment, claimed to be the only one of its kind in Europe, will make it possible to structure academic and industrial research in the GaSb-based semiconductor component field, in line with the objectives of the EquipEx program.
This order with a leading European laboratory, within the framework of France's investments for the future program, confirms Riber's key position in the semiconductor research sector.
MBE412 System
These acquisitions will further strengthen and renew the fleet of equipment in place at the IES, a joint research unit involving Université Montpellier 2 and the Institute for Engineering and Systems Sciences (INSIS), which is part of the French national centre for scientific research (CNRS).
Riber's MBE 412 is suited the low-cost growth of arsenides, phosphides, antimonides, nitride, oxides and silicon germanium films on a single 4-inch wafer.
This versatile machine produces film thickness uniformities of less than one percent and features 12 cell ports symmetrically distributed around the chamber. These ports can be mounted with a vast range of sources, including effusion cells, crackers, plasma sources, gasinjectors, and electron-beam-heated sources.
They are being funded by the "equipment for excellence" (EquipEx) program in connection with France's "Investments for the Future" initiative.
This equipment will contribute towards improving the research capabilities of the "nanoMIR" research group within the IES, a world-leading group for III-V semiconductor components within the GaSb antimonides sector.
More specifically, Eric Tournié, who heads up this group, has confirmed that “this equipment will make it possible to further strengthen the work carried out on innovative optoelectronic components, laser diodes and photodetectors, operating in infrared, as well as the work on their integration with silicon, the core technology for electronics.
The applications for these components include major economic sectors (photonics, defence, telecommunications, etc.) and societal sectors (environment, health, etc.).”
Eric Tournié has also confirmed that, “in addition to outstanding performance capabilities, the Riber MBE412 system sold to the IES offers very high modularity and a unique technique for processing large-format substrates for the controlled development of III-V semiconductor-based nanostructures. The refurbishment of the IES' Compact21 reactor will transform it into a totally new, modular cluster system, with an identical configuration to that of the MBE412 system.”
This equipment, claimed to be the only one of its kind in Europe, will make it possible to structure academic and industrial research in the GaSb-based semiconductor component field, in line with the objectives of the EquipEx program.
This order with a leading European laboratory, within the framework of France's investments for the future program, confirms Riber's key position in the semiconductor research sector.
