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Hittite reveals GaAs telecom devices for 5.5 to 8.6 GHz

The firm's new gallium arsenide based SMT I/Q Upconverter and 2 W power amplifier are ideal for microwave radio, radar & SATCOM applications
Hittite Microwave Corporation has launched a new GaAs MMIC I/Q Upconverter and GaAs MMIC Power Amplifier.

The devices are ideal for high capacity point-to-point/point-to-multi-point radios, SATCOM and radar systems covering the 5.5 to 8.6 GHz frequency range.

The HMC6505LC5 is a compact GaAs MMIC I/Q Upconverter that provides a small signal conversion gain of 15 dB with 22 dBc of sideband rejection. Available in a leadless RoHS compliant SMT package, the HMC6505LC5 utilises an RF amplifier preceded by an I/Q mixer where the LO is driven by a driver amplifier. IF1 and IF2 mixer inputs are provided and an external 90° hybrid is needed to select the required sideband.

This I/Q mixer topology is highly beneficial for microwave radio applications, since the unwanted sideband filtering is reduced. The HMC6505LC5 is a much smaller alternative to hybrid style single sideband upconverter assemblies, and exhibits excellent LO to RF rejection of 14 dBc with output IP3 as high as +35 dBm.

The HMC7357LP5GE is a GaAs pHEMT MMIC Medium Power Amplifier that operates between 5.5 and 8.5 GHz. The amplifier provides 29 dB of gain and +35 dBm of saturated output power at 34% PAE from a +8V supply.

With an excellent Output IP3 of +41.5 dBm, the HMC7357LP5GE is ideal for linear applications demanding +35 dBm of efficient saturated output power. The HMC7357LP5GE amplifier features RF I/Os are internally matched to 50 Ω, and it is available in a compact leadless 5 x 5 mm plastic surface mount package.

Samples and evaluation PC boards for all SMT packaged products are available from stock and can be ordered via the company's e-commerce site or via direct purchase order.


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