Info
Info
News Article

Raytheon Kicks Off 15th Year Of GaN Innovation

The firm's main advancements are in gallium nitride power and performance for warfighters
Raytheon has embarked on its fifteenth year of pioneering the development and system integration of GaN technology. 

In 1999, Raytheon commenced research in GaN at the Raytheon Foundry in Andover, Massachusetts.

Today, the company's GaN innovation extends the warfighter's reach into the battle space by increasing radar ranges, sensitivity and search capabilities.

“GaN technologies are transforming the way we address the evolving needs of our customers," says Paul Ferraro, vice president of Advanced Technology for Raytheon’s Integrated Defence Systems business. “Through partnerships with the Office of the Secretary of Defence (OSD) and DARPA, we are harnessing the revolutionary power, efficiency and performance improvements that GaN provides in programs today including AMDR and Next Generation Jammer. We are optimistic about its impact on future initiatives like 3DELRR and others."

Notable Milestones include:

•             In 2000, Raytheon fabricated its first GaN transistor, the building block for monolithic microwave integrated circuits (MMICs). An MMIC is a type of integrated circuit device that operates at microwave frequencies (300 MHz to 300 GHz). These devices typically perform functions such as microwave mixing, power amplification, low noise amplification and high frequency switching.

•             From 2005 - 2008, Raytheon worked closely with DARPA on the WBGS Phase 2 program, meeting all transistor level technical metrics. The high power density, high efficiency process that emerged during this time helped form the underpinning for our microwave GaN production processes today.

•             In 2009, Raytheon released GaN for production in its 4" Trusted compound semiconductor foundry.

•             Raytheon was honoured by the Office of the Secretary of Defence (OSD) for successful completion of a Defense Production Act (DPA) Title III GaN production improvement program in 2013, culminating more than a decade of government and Raytheon investment in GaN RF (radio frequency) circuit technology.

•             Raytheon says it has demonstrated that the reliability of its GaN technology exceeded the requirement for insertion into production military systems. This maturation of GaN resulted in a Manufacturing Readiness Level (MRL) production capability of “8," . This, the firm says, is the highest level obtained by any organisation in the defence industry for this technology. MRL.This is a measure used by the OSD and many of the world's major companies to assess the maturity of manufacturing readiness.

•             Also through the OSD Title III program, GaN yield was improved by more than 300 percent and cost was reduced more than 75 percent for MMICs.



AngelTech Live III: Join us on 12 April 2021!

AngelTech Live III will be broadcast on 12 April 2021, 10am BST, rebroadcast on 14 April (10am CTT) and 16 April (10am PST) and will feature online versions of the market-leading physical events: CS International and PIC International PLUS a brand new Silicon Semiconductor International Track!

Thanks to the great diversity of the semiconductor industry, we are always chasing new markets and developing a range of exciting technologies.

2021 is no different. Over the last few months interest in deep-UV LEDs has rocketed, due to its capability to disinfect and sanitise areas and combat Covid-19. We shall consider a roadmap for this device, along with technologies for boosting its output.

We shall also look at microLEDs, a display with many wonderful attributes, identifying processes for handling the mass transfer of tiny emitters that hold the key to commercialisation of this technology.

We shall also discuss electrification of transportation, underpinned by wide bandgap power electronics and supported by blue lasers that are ideal for processing copper.

Additional areas we will cover include the development of GaN ICs, to improve the reach of power electronics; the great strides that have been made with gallium oxide; and a look at new materials, such as cubic GaN and AlScN.

Having attracted 1500 delegates over the last 2 online summits, the 3rd event promises to be even bigger and better – with 3 interactive sessions over 1 day and will once again prove to be a key event across the semiconductor and photonic integrated circuits calendar.

So make sure you sign up today and discover the latest cutting edge developments across the compound semiconductor and integrated photonics value chain.

REGISTER FOR FREE

VIEW SESSIONS

Info
×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
X
Info
X
Info
{taasPodcastNotification}
Live Event