News Article
EPC development boards can switch above 10 MHz
The firm says its development boards in half-bridge topology with onboard gate drives simplify evaluation of the EPC8000 family of ultra high frequency, high performance eGaN FETs
Efficient Power Conversion Corporation (EPC) has introduced a family of development boards, the EPC9022 through EPC9030, to simplify evaluation of the EPC8000 family of ultra high frequency eGaN power transistors.
The EPC8000 family of high frequency eGaN FETs has switching transition speeds in the sub-nanosecond range, making them capable of hard-switching applications above 10 MHz – blurring the line between power and RF transistors.
The firm says even beyond the 10 MHz for which they were designed, these products exhibit very good small signal RF performance with high gain well into the low GHz range, making them a competitive choice for RF applications. They are suited for applications, such as wireless power and 65 V and 100 V devices for envelope tracking, where extremely fast power transistor switching is required.
Products in the EPC8000 family are available with on-resistance values from 125 mΩ through 530 mΩ, and three blocking voltage capabilities, 40 V, 65 V and 100 V.
To simplify the evaluation of this family of high frequency, high performance eGaN FETs, EPC is offering a development board for each device in this new product family. The development boards are 2” x 1.5” and contain two eGaN FETs in a half-bridge configuration with minimum switching frequency of 500 kHz. The boards contain all critical components and layout for optimal high frequency switching performance. There are various probe points to facilitate simple waveform measurement and efficiency calculation.
EPC8000 Family Product Specifications and Corresponding Development Board:
Evaluation units of the EPC8000 family of devices are immediately available in 2- and 10-piece packs starting at $23 through Digi-Key Corporation
EPC9022 through EPC9030 development boards are priced at $150 each and are available for immediate delivery from Digi-Key
The EPC8000 family of high frequency eGaN FETs has switching transition speeds in the sub-nanosecond range, making them capable of hard-switching applications above 10 MHz – blurring the line between power and RF transistors.
The firm says even beyond the 10 MHz for which they were designed, these products exhibit very good small signal RF performance with high gain well into the low GHz range, making them a competitive choice for RF applications. They are suited for applications, such as wireless power and 65 V and 100 V devices for envelope tracking, where extremely fast power transistor switching is required.
Products in the EPC8000 family are available with on-resistance values from 125 mΩ through 530 mΩ, and three blocking voltage capabilities, 40 V, 65 V and 100 V.
To simplify the evaluation of this family of high frequency, high performance eGaN FETs, EPC is offering a development board for each device in this new product family. The development boards are 2” x 1.5” and contain two eGaN FETs in a half-bridge configuration with minimum switching frequency of 500 kHz. The boards contain all critical components and layout for optimal high frequency switching performance. There are various probe points to facilitate simple waveform measurement and efficiency calculation.
EPC8000 Family Product Specifications and Corresponding Development Board:
Evaluation units of the EPC8000 family of devices are immediately available in 2- and 10-piece packs starting at $23 through Digi-Key Corporation
EPC9022 through EPC9030 development boards are priced at $150 each and are available for immediate delivery from Digi-Key
