Info
Info
News Article

ST`s SiC Devices Could Help To Address Climate Change

Silicon carbide power MOSFETs have a high-temperature performance edge over other comparable products
                                                                                                                             STMicroelectronics has revealed an new product family enabling power supply designers to drive up energy efficiency in applications such as solar inverters and electric vehicles, enterprise computing and industrial motor drives.



This type of device, a high-voltage SiC power MOSFET, has achieved an industry temperature rating of 200°C.

The firm says SiC's properties help save at least 50 percent of the energy normally wasted passing through conventional silicon power transistors. The devices can also be physically smaller for a high breakdown voltage. This technology is seen as essential for continued improvement in system energy efficiency, miniaturisation and cost.

In computer rooms and data centres, high energy costs are driving power and efficiency to the top of many IT directors’ concerns. Replacing ordinary silicon switches with SiC devices, in bulk power supplies, helps increase Power Usage Effectiveness (PUE); a standard metric for determining data centre energy efficiency.

The Climate Savers Computing Initiative (CSCI) claims that more energy-efficient networking systems and devices can help save over $5 billion and offset 38 million tons of CO2 by 2015.

SiC MOSFETs are also used in solar inverters, as an alternative for conventional high-voltage silicon IGBTs (Insulated Gate Bipolar Transistor) to convert the DC output from the panel into high-voltage AC feeding into the mains supply with no special drive circuitry required.

In addition, by operating at higher frequencies than IGBTs, SiC MOSFETs allow designers to miniaturize other components in the power supply thereby reducing cost and size as well as enhancing energy efficiency.

In electric vehicles, SiC is expected to help significantly increase the energy efficiency and reduce the size of traction systems.

The US DRIVE Electrical & Electronics Technical Team, a partnership between industry and the US government’s Department of Energy, is calling for energy losses to be approximately halved by 2020 while also reducing size by more than 20 percent.

The team’s roadmap specifies wide bandgap semiconductors - in other words, SiC technology - as a focus for R&D to increase power-converter efficiency and make the device tolerate higher operating temperatures more safely. The increased temperature capability of ST’s SiC devices (200°C), compared to silicon and competitors’ SiC MOSFETs, will help simplify vehicle cooling system design.

ST’s new 1200V SiC power MOSFET, the SCT30N120, is currently sampling   and will enter volume production by September 2013. It is available in ST’s proprietary HiP247 package, which has an industry-standard outline and is optimized for high thermal performance. The guide price is $35.00 in quantities of 1000 units.

Major features of SCT30N120:

On-state resistance RDSON

80m Ω typical at 25°C


≤ 100mΩ  typical over a temperature range of 200°C


Low turn-off energy and gate charge


Leakage current lower than 10 μA typical


Fast intrinsic and robust body diode


200°C maximum operating temperature




AngelTech Live III: Join us on 12 April 2021!

AngelTech Live III will be broadcast on 12 April 2021, 10am BST, rebroadcast on 14 April (10am CTT) and 16 April (10am PST) and will feature online versions of the market-leading physical events: CS International and PIC International PLUS a brand new Silicon Semiconductor International Track!

Thanks to the great diversity of the semiconductor industry, we are always chasing new markets and developing a range of exciting technologies.

2021 is no different. Over the last few months interest in deep-UV LEDs has rocketed, due to its capability to disinfect and sanitise areas and combat Covid-19. We shall consider a roadmap for this device, along with technologies for boosting its output.

We shall also look at microLEDs, a display with many wonderful attributes, identifying processes for handling the mass transfer of tiny emitters that hold the key to commercialisation of this technology.

We shall also discuss electrification of transportation, underpinned by wide bandgap power electronics and supported by blue lasers that are ideal for processing copper.

Additional areas we will cover include the development of GaN ICs, to improve the reach of power electronics; the great strides that have been made with gallium oxide; and a look at new materials, such as cubic GaN and AlScN.

Having attracted 1500 delegates over the last 2 online summits, the 3rd event promises to be even bigger and better – with 3 interactive sessions over 1 day and will once again prove to be a key event across the semiconductor and photonic integrated circuits calendar.

So make sure you sign up today and discover the latest cutting edge developments across the compound semiconductor and integrated photonics value chain.

REGISTER FOR FREE

VIEW SESSIONS

Info
×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
X
Info
X
Info
{taasPodcastNotification}
Live Event