News Article
EPC's eGaN DC-DC converters operate at 89 percent efficiency
The gallium nitride on silicon power transistors can operate in harsh environmental conditions
Alex Lidow, EPC CEO and co-founder of Efficient Power Conversion Corporation (EPC), will be presenting results of a newly released family of enhancement mode (eGaN) HEMT transistors.
EPC, an innovator in enhancement-mode GaN on silicon (eGaN) power transistors, will be presenting at the 39th Annual Government Microcircuit Applications and Critical Technology (GOMACTech) Conference, which will be held in Charleston, South Carolina, on April 3rd.
The latest devices are designed for high frequency operation into the 10 MHz range.
The presentation will highlight the stability of these devices under radiation exposure, making them an ideal choice for high reliability applications.
Enhancement-mode GaN transistors have been commercially available since 2010. In that time they have enabled significant efficiency improvement in commercial DC-DC converters in a variety of topologies and at a variety of power levels.
Enhancement-mode transistors have also demonstrated remarkable tolerance to gamma radiation and single event effects (SEE). Compared to radiation-tolerant power MOSFETs, GaN FETs offer up to a forty times improvement in key switching performance figures of merits. This enables designers of space-level power supplies to achieve the efficiencies of commercial state-of-the-art systems.
“We are excited to have the opportunity to share the results of EPC’s latest generation of high performance eGaN power transistors and their exceptional results in radiation testing. These GaN-on-silicon power transistors, designed for multi-megahertz switching converter applications, allow the designer of radiation-tolerant systems to achieve power densities and efficiencies that equal the commercial state-of-the-art,” says Alex Lidow.
