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EPC's EGaN DC-DC Converters Operate At 89 Percent Efficiency

The gallium nitride on silicon power transistors can operate in harsh environmental conditions
 

Alex Lidow, EPC CEO and co-founder of Efficient Power Conversion Corporation (EPC), will be presenting results of a newly released family of enhancement mode (eGaN) HEMT transistors.

EPC, an innovator in enhancement-mode GaN on silicon (eGaN) power transistors, will be presenting at the 39th Annual Government Microcircuit Applications and Critical Technology (GOMACTech) Conference, which will be held in Charleston, South Carolina, on April 3rd.

The latest devices are designed for high frequency operation into the 10 MHz range.

The presentation will highlight the stability of these devices under radiation exposure, making them an ideal choice for high reliability applications.

Enhancement-mode GaN transistors have been commercially available since 2010. In that time they have enabled significant efficiency improvement in commercial DC-DC converters in a variety of topologies and at a variety of power levels.

Enhancement-mode transistors have also demonstrated remarkable tolerance to gamma radiation and single event effects (SEE). Compared to radiation-tolerant power MOSFETs, GaN FETs offer up to a forty times improvement in key switching performance figures of merits. This enables designers of space-level power supplies to achieve the efficiencies of commercial state-of-the-art systems.

“We are excited to have the opportunity to share the results of EPC’s latest generation of high performance eGaN power transistors and their exceptional results in radiation testing. These GaN-on-silicon power transistors, designed for multi-megahertz switching converter applications, allow the designer of radiation-tolerant systems to achieve power densities and efficiencies that equal the commercial state-of-the-art," says Alex Lidow.





AngelTech Live III: Join us on 12 April 2021!

AngelTech Live III will be broadcast on 12 April 2021, 10am BST, rebroadcast on 14 April (10am CTT) and 16 April (10am PST) and will feature online versions of the market-leading physical events: CS International and PIC International PLUS a brand new Silicon Semiconductor International Track!

Thanks to the great diversity of the semiconductor industry, we are always chasing new markets and developing a range of exciting technologies.

2021 is no different. Over the last few months interest in deep-UV LEDs has rocketed, due to its capability to disinfect and sanitise areas and combat Covid-19. We shall consider a roadmap for this device, along with technologies for boosting its output.

We shall also look at microLEDs, a display with many wonderful attributes, identifying processes for handling the mass transfer of tiny emitters that hold the key to commercialisation of this technology.

We shall also discuss electrification of transportation, underpinned by wide bandgap power electronics and supported by blue lasers that are ideal for processing copper.

Additional areas we will cover include the development of GaN ICs, to improve the reach of power electronics; the great strides that have been made with gallium oxide; and a look at new materials, such as cubic GaN and AlScN.

Having attracted 1500 delegates over the last 2 online summits, the 3rd event promises to be even bigger and better – with 3 interactive sessions over 1 day and will once again prove to be a key event across the semiconductor and photonic integrated circuits calendar.

So make sure you sign up today and discover the latest cutting edge developments across the compound semiconductor and integrated photonics value chain.

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