News Article

GaN Discrete, IC And Substrate Market To Soar To Over $15 Billion

The gallium nitride market will be dominated by power devices and draw most of its revenue from the communication infrastructure sector

MarketsandMarkets estimates that the GaN  discrete, IC and substrate market will be worth $15607.85 million by 2022.
This is stated in the "Gallium Nitride (GaN) Semiconductor Devices and Substrate Wafer Market research report," which analyses the global market by market dynamics & trends.

Key players are Fujitsu Limited, Toshiba Corporation, Koninklijke Philips N.V., Texas Instruments, Mitsubishi Chemical Corporation and Aixtron SE among others.

The specific sub sector where GaN-based semiconductors and wafers have an edge over normal silicon-based counterparts are in Power Semiconductors & Electronics and in terms of end-user application sectors.

The two major upcoming sectors facilitating the huge demand for GaN semiconductor devices are the Industrial & Power sector and Communication Infrastructure sector.

The Communication Infrastructure sector has found use for GaN power discretes, particularly for transistors in power amplification, rectification, and high-frequency switching.

Gallium nitride, along with SiC devices have turned out to be the choice for most power semiconductor applications and are quickly replacing the existing silicon technology.

GaN has a wider band gap, high break-down voltage, larger critical electric field, and higher thermal conductivity than silicon. This enables GaN devices to operate at higher voltages and high switching frequencies and handle higher power density. They also offer enhanced power efficiency compared to pure silicon devices.

These properties allow GaN discretes such as Schottky diodes, FETs, HEMTs and other advanced transistors to operate efficiently at much higher voltage levels, exceeding the limits of their silicon counterparts.

GaN power semiconductors also help in reducing the conduction and switching losses, thereby offering higher efficiency in electronic systems. Currently, the major application segments of GaN power semiconductors are inverters and  converters, RF devices, power supply modules and motor drives which are being used across all the end user sectors.

The market of GaN power semiconductor devices is primarily growing due to penetration into the medium-voltage power electronics market and applications across all the major end-user verticals. It is obvious that most of the market revenue comes from the rising number of advanced power applications of industrial, power, solar and wind sector and the sector's developing globally.

Gallium nitride power devices draw most of their revenue from the Communication Infrastructure sector. They have been solely focusing on replacing their silicon counterparts in various RF power devices, particularly in RF communication applications over the past few years.

GaN devices are smaller, lighter but tougher and efficient compared to silicon semiconductor devices and serve as ideal replacements for silicon devices which have hit maturity.

GaN devices and wafers also feature low sensitivity to ionising radiation, better stability in some radiation environments, They also have a future in solar cell arrays, satellites and high-end power appliances in the Military, Defence & Aerospace sector.

These devices also have huge revenue potential in the automotive and transportation sector, mainly in the electric vehicles & hybrid electric vehicles segment of the automotive sector.

GaN power semiconductors possess the potential to operate at higher temperatures, higher power levels and voltages, high frequencies (microwave ranges). The number of applications is increasing day by day in various industries that include telecommunication, consumer electronics, automotive, industrial, power and clean-tech applications.

The GaN market's total competitive landscape had only a handful of players at the beginning of the previous decade, but it quickly emerged into a significant network of key players for both power and opto-semiconductors.

Currently, the overall GaN power semiconductors market accounts for less than 1 percent of the total power semiconductors market (currently at $34 billion including power discrete and power ICs), but over the next ten years, the entire base for power semiconductors & electronics players is expected to penetrate into this new value chain, thereby rapidly increasing the percentage share.

Today's world includes numerous suitable power applications for GaN in several application segments, such as power distribution systems, industrial systems, heavy electrical systems, turbines, heavy machinery, advanced industrial control systems, electro-mechanical computing systems, and so on.

They also include several new power applications (clean-tech) such as High-Voltage Direct Current (HVDC), Smart Grid Power Systems, Wind Turbines, Wind Power Systems, Solar Power Systems, Electric & Hybrid Electric Vehicles.

Another application sector is ICT, with several communication application segments such as RF, RADAR, and Satellite communication offering huge revenue potentials owing to the unbeatable ability of GaN to operate at high-frequency ranges, including microwave frequencies.

The potential market size of these massive applications is currently in trillions, making the total addressable market for the GaN power semiconductors worth billions.

AngelTech Live III: Join us on 12 April 2021!

AngelTech Live III will be broadcast on 12 April 2021, 10am BST, rebroadcast on 14 April (10am CTT) and 16 April (10am PST) and will feature online versions of the market-leading physical events: CS International and PIC International PLUS a brand new Silicon Semiconductor International Track!

Thanks to the great diversity of the semiconductor industry, we are always chasing new markets and developing a range of exciting technologies.

2021 is no different. Over the last few months interest in deep-UV LEDs has rocketed, due to its capability to disinfect and sanitise areas and combat Covid-19. We shall consider a roadmap for this device, along with technologies for boosting its output.

We shall also look at microLEDs, a display with many wonderful attributes, identifying processes for handling the mass transfer of tiny emitters that hold the key to commercialisation of this technology.

We shall also discuss electrification of transportation, underpinned by wide bandgap power electronics and supported by blue lasers that are ideal for processing copper.

Additional areas we will cover include the development of GaN ICs, to improve the reach of power electronics; the great strides that have been made with gallium oxide; and a look at new materials, such as cubic GaN and AlScN.

Having attracted 1500 delegates over the last 2 online summits, the 3rd event promises to be even bigger and better – with 3 interactive sessions over 1 day and will once again prove to be a key event across the semiconductor and photonic integrated circuits calendar.

So make sure you sign up today and discover the latest cutting edge developments across the compound semiconductor and integrated photonics value chain.



Search the news archive

To close this popup you can press escape or click the close icon.
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.

Please subscribe me to:


You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
Live Event