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Sumitomo Electric launches GaN HEMTs for space

The gallium nitride modules have a power added efficiency of 71.2 percent
Sumitomo Electric Device Innovations USA, Inc. (SEDU is to showcase next generation GaN devices for space applications at IMS2014.

This event is taking place between June 3rd and 5th at the Tampa Convention Centre, Tampa, Florida. Sumitomo Electric will be at booth #333.

GaN provides the benefits that space applications require such as operation at much higher temperatures, higher power added efficiency, wider bandwidth than GaAs all the while reducing overall operational cost.

"Sumitomo Electric is dedicated to offering a broad range of space qualified RF products over thirty years," says John Wyatt, President of Sumitomo Electric Device Innovations USA. "The combination of high power, high gain and excellent efficiency performance makes our next generation GaN HEMTs for space very attractive design solution. For example ES/SGN15H150IV provides 150 W output power at 1.575 GHz with power added efficiency of 71.2 percent."

The devices offer a high output power in single ended package and exhibit more than 70 percent power added efficiency. They have 18 dB gain at 1.5 GHz and operate at 50 V.

Samples for evaluation up to 150 W will be available in August 2014.



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