News Article
EPC demonstrate GaN transistors vs silicon power MOSFETs
Efficient Power Conversion to Present Gallium Nitride Technology for Benchmark Efficiency Wireless Energy Converters at 2014 PCIM Asia Conference
At PCIM Asia conference in Shanghai, China, an EPC applications expert will demonstrate the difference of GaN transistors compared to silicon power MOSFETs in wireless energy transfer applications.
Efficient Power Conversion Corporation, provider of enhancement-mode gallium nitride on silicon power transistors will be presenting an application-focused presentation at PCIM Asia highlighting the efficiency of using eGaN FETs in wireless power transfer. The conference will be held in Shanghai, China from June 17th through the 19th.
In this presentation, EPC state they will demonstrate the ability of eGaN FETs to be employed in a class-E wireless energy transfer system that shows a 20 percentage point improvement in peak efficiency over a voltage-mode class-D version using the same coils and device load. The designs operate with loosely coupled coils in the 6.78 MHz ISM band.
EPC state the experimental example demonstrates why the superior characteristics of the eGaN FETs, such as low input and output capacitance, low package inductances, and small size, make them an ideal choice for wireless power systems. The experimental unit was designed to deliver up to 30 W and the EPC2012 eGaN FET allows the class-E system to operate at optimum conversion efficiency. EPC will also demonstrate a new topology that is able to operate with improved stability and reduced component counts compared with the Class E example.
“Wireless energy transfer will be one of the largest and fastest growing markets for power components over the next ten years. We believe eGaN FETs offer the lowest cost, most stable and highest efficiency solution available today,” said Alex Lidow, EPC’s co-founder and CEO.
Visit our web site: www.epc-co.com
Efficient Power Conversion Corporation, provider of enhancement-mode gallium nitride on silicon power transistors will be presenting an application-focused presentation at PCIM Asia highlighting the efficiency of using eGaN FETs in wireless power transfer. The conference will be held in Shanghai, China from June 17th through the 19th.
In this presentation, EPC state they will demonstrate the ability of eGaN FETs to be employed in a class-E wireless energy transfer system that shows a 20 percentage point improvement in peak efficiency over a voltage-mode class-D version using the same coils and device load. The designs operate with loosely coupled coils in the 6.78 MHz ISM band.
EPC state the experimental example demonstrates why the superior characteristics of the eGaN FETs, such as low input and output capacitance, low package inductances, and small size, make them an ideal choice for wireless power systems. The experimental unit was designed to deliver up to 30 W and the EPC2012 eGaN FET allows the class-E system to operate at optimum conversion efficiency. EPC will also demonstrate a new topology that is able to operate with improved stability and reduced component counts compared with the Class E example.
“Wireless energy transfer will be one of the largest and fastest growing markets for power components over the next ten years. We believe eGaN FETs offer the lowest cost, most stable and highest efficiency solution available today,” said Alex Lidow, EPC’s co-founder and CEO.
Visit our web site: www.epc-co.com
