News Article
Mitsubishi Electric touts GaAs based LD for projectors
The gallium arsenide based 638nm laser diode will be showcased at LDC 2014 in Taiwan this week
Mitsubishi Electric has developed a GaAs based 638nm wavelength red laser diode (LD) offering an output power of 1.8 W at continuous-wave operation.
The company says this is the world's highest level among 638nm LDs in this package size used as light sources for projectors.
A commercial launch is targeted for the fiscal year ending in March 2016 at which time laser light sources for projectors are expected to take off.
The LD will be presented during the Laser Display Conference 2014 (LDC 2014) at National Chung Hsing University in Taichung, Taiwan on June 19th and 20th.
638nm wavelength red laser diode
Light sources for colour projectors, conventionally lamps, are being replaced with solid-state light sources offering higher energy efficiency, higher colour reproduction and longer life.
LDs deliver high output power while consuming low power because of their high power-conversion efficiency.
Mitsubishi Electric says that previously, the output power of red LDs with wavelengths shorter than 640nm was not sufficient for high-brightness projector applications at high temperatures.
As a first step to overcome this limitation, the firm applied specialised window-mirror structures and epitaxial growth technology to develop an LD capable of 0.5W power output at continuous-wave operation, which is packaged in a 5.6mm diameter transistor-outline can (TO-can).
After that, it applied a new LD structure in a 9.0mm TO-can package to achieve an output power of 1.8W at a 638nm lasing wavelength at continuous wave operation within an operating range of 0 to 45oC.
The device is also capable of emitting 1.3 W at continuous wave operation above 55oC and
should meet the demands for bright projector systems.
Luminosity as a red light source exceeds 220 lumens due to lasing at a short wavelength and electrical conversion efficiency is 38 percent at 1.8 W at 25oC, helping to reduce power consumption.
The company says this is the world's highest level among 638nm LDs in this package size used as light sources for projectors.
A commercial launch is targeted for the fiscal year ending in March 2016 at which time laser light sources for projectors are expected to take off.
The LD will be presented during the Laser Display Conference 2014 (LDC 2014) at National Chung Hsing University in Taichung, Taiwan on June 19th and 20th.
638nm wavelength red laser diode
Light sources for colour projectors, conventionally lamps, are being replaced with solid-state light sources offering higher energy efficiency, higher colour reproduction and longer life.
LDs deliver high output power while consuming low power because of their high power-conversion efficiency.
Mitsubishi Electric says that previously, the output power of red LDs with wavelengths shorter than 640nm was not sufficient for high-brightness projector applications at high temperatures.
As a first step to overcome this limitation, the firm applied specialised window-mirror structures and epitaxial growth technology to develop an LD capable of 0.5W power output at continuous-wave operation, which is packaged in a 5.6mm diameter transistor-outline can (TO-can).
After that, it applied a new LD structure in a 9.0mm TO-can package to achieve an output power of 1.8W at a 638nm lasing wavelength at continuous wave operation within an operating range of 0 to 45oC.
The device is also capable of emitting 1.3 W at continuous wave operation above 55oC and
should meet the demands for bright projector systems.
Luminosity as a red light source exceeds 220 lumens due to lasing at a short wavelength and electrical conversion efficiency is 38 percent at 1.8 W at 25oC, helping to reduce power consumption.
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