News Article
Morgan Advanced Materials make advances in materials
Improved CVD growth capability enables 300+ mm components
Morgan Advanced Materials has announced advances in its range of materials grown using chemical vapour deposition processes. Morgan's CVD silicon carbide and pyrolytic boron nitride materials are for use in rapid thermal processing and plasma etch process chamber components, as well as metalorganic CVD tools for high-brightness white LED manufacturing using the indium gallium nitride process.
Morgan's improved CVD SiC growth capability enables the manufacture of 300+ millimeter diameter components with thicknesses of more than 10mm at production volumes for plasma etch applications. With access to ultrasonic machining capability, Morgan offers high tolerance CNC machining and precision hard grinding, as well as the patented Rmax process for producing focus CVD SiC ring shapes.
Morgan's high purity (99.999 percent+) SiC material has high thermal conductivity, is resistant to chemical erosion, and features minimal particulate generation, making it suitable for chlorine and fluorine plasma etch processes. The material can also be used in producing gas distribution plates. Ultrasonic drilling can provide holes with diameters as small as 0.5mm, ideal for custom etch applications.
High purity (99.99 percent+) PBN materials have a working temperature in excess of 1500degC, and feature high electrical resistivity and high dielectric strength. Low out-gassing, non-wetting, and non-toxic, the PBN materials are inert to most acids, alkalis and organic solvents and have high thermal conductivity in the "a" direction. The advanced materials are a good choice for manufacturers of PBN coated graphite heaters and PBN effusion cell components.
Morgan's improved CVD SiC growth capability enables the manufacture of 300+ millimeter diameter components with thicknesses of more than 10mm at production volumes for plasma etch applications. With access to ultrasonic machining capability, Morgan offers high tolerance CNC machining and precision hard grinding, as well as the patented Rmax process for producing focus CVD SiC ring shapes.
Morgan's high purity (99.999 percent+) SiC material has high thermal conductivity, is resistant to chemical erosion, and features minimal particulate generation, making it suitable for chlorine and fluorine plasma etch processes. The material can also be used in producing gas distribution plates. Ultrasonic drilling can provide holes with diameters as small as 0.5mm, ideal for custom etch applications.
High purity (99.99 percent+) PBN materials have a working temperature in excess of 1500degC, and feature high electrical resistivity and high dielectric strength. Low out-gassing, non-wetting, and non-toxic, the PBN materials are inert to most acids, alkalis and organic solvents and have high thermal conductivity in the "a" direction. The advanced materials are a good choice for manufacturers of PBN coated graphite heaters and PBN effusion cell components.
