Custom MMIC adds new 14 to 18GHz GaN Power Amp
Offers high power, high linearity, and efficiency over 32 percent
Custom MMIC, a US developer of MMICs, has added a 14 to 18 GHz GaN power amplifier in die form, to its expanding product line.
The CMD216 delivers 16 dB of flat gain across the entire 14 to 18 GHz bandwidth, an output 1 dB compression point of +37dBm, and a saturated output power of +38dBm. The CMD216 requires a bias of Vdd = 28 V, 550mA, and Vgg = -3.4 V. Additionally, the amplifier boasts a power added efficiency of 32 percent or greater.
The CMD216 is a fully matched 50ohm matched design and only requires external bypass capacitors to complete the bias circuitry. The die is passivated for increased reliability and moisture protection. The CMD216 is ideally suited for Ku-band communications systems.
Custom MMIC, based in Westford, MA, offers both hands-on design through testing services, and a growing library of system-ready designs. It has experience in GaAs, GaN, SiC, InP, and InGaP HBT and has established relationships with the leading foundries in these technologies. The company specialises in RF through millimeter-wave circuits for satellite communications, radar systems, cellular infrastructure, consumer electronics, VSAT, and point-to-point radio systems.